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ond for e 18 i (1 al c 2 ms. x y 800 8C annealing in N2 ambient. Meanwhile the HfOxNy films can also effectively suppress oxygen diffusion during high temperature annealing such as plasma-enhanced chemical vapor deposition (PECVD) to our knowledge, most groups have mainly focused on re-active sputtering of Hf metal target in a mixture N2/O2/Ar 2. Experimental details Applied Surface Science 252 (The n-type Si (1 0 0) substrates with a resistivity of 2– 5 V cm were pre-cleaned by a standard RCA (Radio Corporation of American) processing, then the substrates wer