Improvement of ultrathin Hafnium oxynitrides deposited on Si-substrate by adding gas ratio of N2/O2

An investigation of the electrical and physical properties of the HfOxNy films in the mixtures of different gas are presented for applications in MOS devices. The HfOxNy films were deposited onto n-type Si substrates by sputtering using mixture of N2+O2 and N2O+O2, respectively. Electrical measurements included current-voltage and capacitance-voltage measurements, and physical measurements included X-ray photoelectron spectroscopy (XPS). Films made by deposited in N2+O2 ambient showed better leakage current behavior, demonstrating that more nitrogen content can suppress the leakage current