Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions

The resistive switching associated with polarization reversal is studied in detail in ferroelectric BaTiO3 tunnel junctions, with focus on the dynamics of the ferroelectric domain switching. It is observed that the transition between the high‐resistance state (HRS) and the low‐resistance state (LRS) is largely asymmetric being smooth from LRS to HRS, but proceeds via avalanches in the HRS‐to‐LRS transitions. It is shown that this distinct behavior is related to the presence of an imprint field in the junction and has important consequences on the junction's performance.Financial support from the Spanish Government, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV‐2015‐0496) and the MAT2017‐85232‐R, MAT2014‐56063‐C2‐1‐R, and MAT2015‐73839‐JIN projects, and from Generalitat de Catalunya (2017 SGR 1377) was acknowledged. M.Q. was financially supported by China Scholarship Council (CSC) with Grant No. 201406890019. M.Q. work was done as a part of her Ph.D. program in Materials Science at Universitat Autònoma de Barcelona. I.F. acknowledges Ramon y Cajal contract RYC‐2017‐22531. The authors thank Dr. Neus Domingo for the use of PFM equipment.Peer reviewe