Based on first-principles calculations, we demonstrate the impact of the electric polarization on electron transport in ferroelectric tunnel junctions (FTJs). Using a Pt/BaTiO3 /Pt FTJ as a model system, we show that the polarization of the BaTiO3 barrier leads to a substantial drop in the tunneling conductance due to changes in the electronic structure driven by ferroelectric displacements. We find a sizable change in the transmission probability across the Pt/BaTiO3 interface with polarization reversal, a signature of the electroresistance effect. These results reveal exciting prospects that FTJs offer as resistive switches in nanoscale electronic devices
Ferroelectric tunnel junctions (FTJs), promising for applications in nanoscale electronics exhibit a...
Ferroelectric tunnel junctions (FTJs), promising for applications in nanoscale electronics exhibit a...
In this paper, a theoretical approach comprising the nonequilibrium Green’s function method for elec...
Based on first-principles calculations, we demonstrate the impact of the electric polarization on el...
First principles electronic structure and transport calculations are used to demonstrate the impact ...
Realizing a large tunneling electroresistance (TER) effect is crucial for device application of ferr...
Recent experimental results have demonstrated ferroelectricity in thin films of SrTiO3 induced by an...
Realizing a large tunneling electroresistance (TER) effect is crucial for device application of ferr...
We propose energy band engineering to enhance tunneling electroresistance (TER) in ferroelectric tun...
In ferroelectric tunnel junctions, the ferroelectric polarization state of the barrier influences th...
Motivated by recent experimental observations, we explore electron transport properties of a ferroel...
Motivated by recent experimental observations, we explore electron transport properties of a ferroel...
In ferroelectric tunnel junctions, the ferroelectric polarization state of the barrier influences th...
Tunneling electroresistance (TER) effect is the change in the electrical resistance of a ferroelectr...
Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO3 (n...
Ferroelectric tunnel junctions (FTJs), promising for applications in nanoscale electronics exhibit a...
Ferroelectric tunnel junctions (FTJs), promising for applications in nanoscale electronics exhibit a...
In this paper, a theoretical approach comprising the nonequilibrium Green’s function method for elec...
Based on first-principles calculations, we demonstrate the impact of the electric polarization on el...
First principles electronic structure and transport calculations are used to demonstrate the impact ...
Realizing a large tunneling electroresistance (TER) effect is crucial for device application of ferr...
Recent experimental results have demonstrated ferroelectricity in thin films of SrTiO3 induced by an...
Realizing a large tunneling electroresistance (TER) effect is crucial for device application of ferr...
We propose energy band engineering to enhance tunneling electroresistance (TER) in ferroelectric tun...
In ferroelectric tunnel junctions, the ferroelectric polarization state of the barrier influences th...
Motivated by recent experimental observations, we explore electron transport properties of a ferroel...
Motivated by recent experimental observations, we explore electron transport properties of a ferroel...
In ferroelectric tunnel junctions, the ferroelectric polarization state of the barrier influences th...
Tunneling electroresistance (TER) effect is the change in the electrical resistance of a ferroelectr...
Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO3 (n...
Ferroelectric tunnel junctions (FTJs), promising for applications in nanoscale electronics exhibit a...
Ferroelectric tunnel junctions (FTJs), promising for applications in nanoscale electronics exhibit a...
In this paper, a theoretical approach comprising the nonequilibrium Green’s function method for elec...