Tunneling electroresistance of Pt/BaTiO3/SrRuO3 ferroelectric tunnel junctions is investigated as a function of temperature. Two distinct resistance states that are dependent on polarization direction in the BaTiO3 barrier layer and bipolar resistance switching are observed at various temperatures from 10 to 290 K. The ON/OFF current ratio of Pt/BaTiO3/SrRuO3 tunnel junctions increases monotonically with decreasing temperature above 50 K and saturates below 50 K. The enhanced tunneling electroresistance at low temperatures can be ascribed to the suppression of thermally assisted indirect tunneling, which is less sensitive to the polarization reversal of BaTiO3 compared to the direct tunneling.Published versio
Scanning tunneling spectroscopy in ultrahigh vacuum conditions and conductive atomic-force microscop...
In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001)...
Ferroelectric tunnel junctions (FTJs) are promising candidates for nonvolatile memories and memristo...
Tunneling electroresistance of Pt/BaTiO3/SrRuO3 ferroelectric tunnel junctions is investigated as a ...
Realizing a large tunneling electroresistance (TER) effect is crucial for device application of ferr...
Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions, at negative voltage bias, for two polarization directions...
Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applic...
The persistency of ferroelectricity in ultrathin films allows their use as tunnel barriers. Ferroele...
International audienceRoom-temperature electrocaloric properties of Pt/BaTiO3/SrRuO3 ferroelectric t...
In this paper, a theoretical approach comprising the nonequilibrium Green’s function method for elec...
Based on first-principles calculations, we demonstrate the impact of the electric polarization on el...
The range of recently discovered phenomena in complex oxide heterostructures, made possible owing to...
Systematic investigation of the scalability for tunneling electroresistance (TER) of integrated Co/B...
The resistive switching associated with polarization reversal is studied in detail in ferroelectric ...
In ferroelectric tunnel junctions, the ferroelectric polarization state of the barrier influences th...
Scanning tunneling spectroscopy in ultrahigh vacuum conditions and conductive atomic-force microscop...
In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001)...
Ferroelectric tunnel junctions (FTJs) are promising candidates for nonvolatile memories and memristo...
Tunneling electroresistance of Pt/BaTiO3/SrRuO3 ferroelectric tunnel junctions is investigated as a ...
Realizing a large tunneling electroresistance (TER) effect is crucial for device application of ferr...
Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions, at negative voltage bias, for two polarization directions...
Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applic...
The persistency of ferroelectricity in ultrathin films allows their use as tunnel barriers. Ferroele...
International audienceRoom-temperature electrocaloric properties of Pt/BaTiO3/SrRuO3 ferroelectric t...
In this paper, a theoretical approach comprising the nonequilibrium Green’s function method for elec...
Based on first-principles calculations, we demonstrate the impact of the electric polarization on el...
The range of recently discovered phenomena in complex oxide heterostructures, made possible owing to...
Systematic investigation of the scalability for tunneling electroresistance (TER) of integrated Co/B...
The resistive switching associated with polarization reversal is studied in detail in ferroelectric ...
In ferroelectric tunnel junctions, the ferroelectric polarization state of the barrier influences th...
Scanning tunneling spectroscopy in ultrahigh vacuum conditions and conductive atomic-force microscop...
In this work, we fabricate BaTiO3/La0.67Sr0.33MnO3 (BTO/LSMO) ferroelectric tunnel junction on (001)...
Ferroelectric tunnel junctions (FTJs) are promising candidates for nonvolatile memories and memristo...