Dissociated screw dislocation which can relieve strain energy in the epitaxial layer of GeSi on Si(001)
- Wan, XY
- Liang, JW
- Liu, ML
- Jin, XJ
Publication date
January 1997
DOI Publisher
physical review b ISSN
0163-1829 Journal
issn:0163-1829Abstract
A dissociated screw dislocation parallel to the interface was found in the epitaxial layer of the Ge0.17Si0.83 Si(001) system. It is shown that this dissociated screw dislocation which consists of two 30 degrees partials can relieve misfit strain energy, and the relieved misfit energy is proportional to the width of the stacking fault between the two partials.Physics, Condensed MatterSCI(E)3ARTICLE159259-92625
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