Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth

The misfit dislocations in [001] Ge(Si)/Si islands grown at 700°C were investigated using transmission electron microscopy. 30° partial misfit dislocations are found both in the island/substrate interface and near the island surface. Since the 30° partial leads the movement of the 60° dissociated misfit dislocation in a (001) compressively strained system such as (001) GeSi/Si, a generation mechanism of misfit dislocations through partial misfit dislocations half loops is proposed. © 2002 American Institute of Physics