Add to ORKGWe have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved
Fully relaxed, strain-tuning Si1-xGex buffers have been grown at very high temperatures of 950-1080 ...
A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combina...
""\\"We present a synergic experimental and theoretical investigation of the plastic relaxation onse...
We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the tot...
Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si su...
In this paper, a graded Si1-xGex buffer and thereafter the Si0.8Ge0.2 uniform layer were grown at a ...
The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature...
Strain relaxed Si1−Ge buffer layers on Si(001) can be used as virtual substrates for the growth of b...
A low-temperature Si0.8Ge0.2 (LT-Si0.8Ge0.2) interlayer was grown at 500 degrees C to improve the re...
Single-crystalline Si1−xGex thin films on Si (100) with low threading dislocation density (TDD...
We demonstrate a novel growth technique, metal-catalyzed, lateral epitaxial growth, to grow Ge films...
We have used Raman spectroscopy, transmission electron microscopy, x-ray diffraction, and x-ray phot...
International audienceThick Ge layers grown on Si(0 0 1) are handy for the production of GeOI wafers...
High-energy (1 MeV), ion irradiation of GeSi/Si strained layers at elevated temperatures can cause s...
We present a detailed experimental and theoretical analysis of the epitaxial stress relaxation proce...
Fully relaxed, strain-tuning Si1-xGex buffers have been grown at very high temperatures of 950-1080 ...
A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combina...
""\\"We present a synergic experimental and theoretical investigation of the plastic relaxation onse...
We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the tot...
Epitaxial Ge with low dislocation density is grown on a low temperature grown Ge seed layer on Si su...
In this paper, a graded Si1-xGex buffer and thereafter the Si0.8Ge0.2 uniform layer were grown at a ...
The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature...
Strain relaxed Si1−Ge buffer layers on Si(001) can be used as virtual substrates for the growth of b...
A low-temperature Si0.8Ge0.2 (LT-Si0.8Ge0.2) interlayer was grown at 500 degrees C to improve the re...
Single-crystalline Si1−xGex thin films on Si (100) with low threading dislocation density (TDD...
We demonstrate a novel growth technique, metal-catalyzed, lateral epitaxial growth, to grow Ge films...
We have used Raman spectroscopy, transmission electron microscopy, x-ray diffraction, and x-ray phot...
International audienceThick Ge layers grown on Si(0 0 1) are handy for the production of GeOI wafers...
High-energy (1 MeV), ion irradiation of GeSi/Si strained layers at elevated temperatures can cause s...
We present a detailed experimental and theoretical analysis of the epitaxial stress relaxation proce...
Fully relaxed, strain-tuning Si1-xGex buffers have been grown at very high temperatures of 950-1080 ...
A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combina...
""\\"We present a synergic experimental and theoretical investigation of the plastic relaxation onse...