Design and fabrication of large ultra-thin PIN detector with membrane stress deviation

In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration is proposed, and the related device fabrication process is developed. Ultra-thin PIN detector similar to 1.13 cm(2) in area is fabricated on a thin (similar to 35 mu m) silicon membrane, and characterized. Detector performance improvement has been successfully demonstrated. With the membrane stress avoidance design, the improved detector exhibits a leakage of 6nA, which is at least 5 times lower than that of detector of identical junction area. The new detector features a full depleted capacitance of 110 pF, and a FWHM of 40.86 keV energy resolution for 5.486 MeV alpha particle spectrography.Instruments & InstrumentationSCI(E)1ARTICLEnull