Fabrication of thin silicon PIN detector based on wafer bonding technology

A novel process for fabricating thin silicon PIN detectors based on wafer bonding technology is proposed. Two silicon wafers, device wafer and supporting wafer, with different orientation and resistivity are bonded at high temperature. The bonded device wafer is grinded and polished. Processing this wafer, we successfully produced 100um thick PIN detectors with detecting area ranging from 1 to 113 mm2. The full depletion voltage of all the detectors is about 9V and electrical testing shows a low leakage current of around 100nA/cm3 at 11V. The energy resolution of the fabricated detectors for 5.486Mev alpha particles from Am is 0.34%-0.46%. ? The Electrochemical Society.EI