We have developed ion-implanted PIN radiation detectors with five kinds of thickness by advanced microelectronic and micromechanical technology. Among them, three types with thickness of 300 ??m, 450 ??m, and 1000 ??m are chosen to do test experiments of the leak current, noise, and energy resolution. The results show that our PIN detectors are of good performances compatible to ORTEC detectors. Under 25.7??C environment temperature, the average leak current is 14 nA, the noise is 7.4 keV, and the resolution is 16.9 keV. The resolution may have the room to be improved since the noise is lower than ORTEC detectors.EI05457-4602
Due to their low depletion voltage, even after high particle fluences, improved tracking precision a...
We report on the processing and characterization of microstrip sensors and pad detectors produced on...
Due to their low depletion voltage, even after high particle fluences, improved tracking precision a...
A new process flow of fabricating large area thin silicon PIN radiation detectors is presented in th...
The effects of resistivity and crystal orientation on the leakage-current and the radiation-response...
利用先进的微电子、微机械加工技术,研制了从300~1000μm共5种厚度的离子注入型PIN辐射探测器,选择其中300 、450和1000μm三种规格进行漏电流、噪声水平和能谱分辨率等指标的测试,并与O...
A novel process for ultra-thin (30??50??m) PIN detector fabrication has been developed. The leakage ...
A novel process for fabricating thin silicon PIN detectors based on wafer bonding technology is prop...
In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration ...
Thin substrates are one of the possible choices to provide radiation hard detectors for future high-...
Due to their low depletion voltage, even after high particle fluences, improved tracking precision a...
New designs of silicon pixel detectors have been developed for more radiation-hard CMS forward pixel...
Thin substrates are one of the possible choices to provide radiation hard detectors for future high-...
PIN radiation detectors and other test-structures have been fabricated on a FZ, high resistivity (2 ...
Technical progress on silicon pad electron detectors, currently used in emission channelling experim...
Due to their low depletion voltage, even after high particle fluences, improved tracking precision a...
We report on the processing and characterization of microstrip sensors and pad detectors produced on...
Due to their low depletion voltage, even after high particle fluences, improved tracking precision a...
A new process flow of fabricating large area thin silicon PIN radiation detectors is presented in th...
The effects of resistivity and crystal orientation on the leakage-current and the radiation-response...
利用先进的微电子、微机械加工技术,研制了从300~1000μm共5种厚度的离子注入型PIN辐射探测器,选择其中300 、450和1000μm三种规格进行漏电流、噪声水平和能谱分辨率等指标的测试,并与O...
A novel process for ultra-thin (30??50??m) PIN detector fabrication has been developed. The leakage ...
A novel process for fabricating thin silicon PIN detectors based on wafer bonding technology is prop...
In this paper, the design of large thin PIN detector with a membrane stress avoidance configuration ...
Thin substrates are one of the possible choices to provide radiation hard detectors for future high-...
Due to their low depletion voltage, even after high particle fluences, improved tracking precision a...
New designs of silicon pixel detectors have been developed for more radiation-hard CMS forward pixel...
Thin substrates are one of the possible choices to provide radiation hard detectors for future high-...
PIN radiation detectors and other test-structures have been fabricated on a FZ, high resistivity (2 ...
Technical progress on silicon pad electron detectors, currently used in emission channelling experim...
Due to their low depletion voltage, even after high particle fluences, improved tracking precision a...
We report on the processing and characterization of microstrip sensors and pad detectors produced on...
Due to their low depletion voltage, even after high particle fluences, improved tracking precision a...