Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic

In this paper, we report formation of GAA buckled dual Si nanowire MOSFETs including two sub-80 nm Si cores on bulk Si using 0.8 mu m optical lithography and local oxidation for the first time. 0.833 GPa uniaxial tensile stress is measured in the buckled suspended dual Si nanowires using micro-Raman spectroscopy. The array of GAA buckled dual Si nanowire MOSFETs at V-DS = 50 mV shows 64 mV/dec. subthreshold slope and 61% stress-based low-field electron mobility enhancement in comparison to the omega-gate relaxed reference device. Finally, digital logic implementation is demonstrated using multi-gate nanowires on bulk Si. (C) 2013 Elsevier B.V. All rights reserved