Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
- Najmzadeh, Mohammad
- Bouvet, Didier
- Grabinski, Wladyslaw
- Ionescu, Mihai Adrian
Publication date
October 2011
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ~400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated
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