Add to ORKGAbstract-A new resonant-tunneling diode with four potential barriers and three quantum wells is fabricated and applied to multiple-valued logic for the first time. The diode exhibited significant double negative resistance characteristics and operated as a triply stable device with a single supply voltage between 180 and 230 K. I
The electrical and optical properties of an n-oped triple barrier resonant tunneling diode are inves...
The electrical and optical properties of an n-oped triple barrier resonant tunneling diode are inves...
We propose "novel symmetrical triple-barrier structures with outer wells" and analyze theoretically ...
Using a series connection of two specially designed resonant tunnelling diodes, we observed three ne...
We demonstrate a novel multiple-valued logic (MVL) gate using series-connected resonant tunneling de...
This dissertation presents research on the application of resonant-tunneling diodes (RTDs) in multiv...
This dissertation presents research on the application of resonant-tunneling diodes (RTDs) in multiv...
The manufacturability of logic circuits based on quantum tunnelling devices, namely double-barrier r...
We present a novel multiple-threshold circuit using resonant-tunneling diodes (RTDs). The logic oper...
By using resonant-tunneling diodes (RTD's) and high electron mobility transistors (HEMT's), we imple...
Over the three-year course of this program, several issues in the device physics of resonant-tunneli...
We demonstrate unipolar complementary circuits consisting of a pair of resonant tunneling transistor...
The electrical and optical properties of an n-oped triple barrier resonant tunneling diode are inves...
Three-terminal devices based on resonant tunneling through two quantum barriers separated by a quant...
Three-terminal devices based on resonant tunneling through two quantum barriers separated by a quant...
The electrical and optical properties of an n-oped triple barrier resonant tunneling diode are inves...
The electrical and optical properties of an n-oped triple barrier resonant tunneling diode are inves...
We propose "novel symmetrical triple-barrier structures with outer wells" and analyze theoretically ...
Using a series connection of two specially designed resonant tunnelling diodes, we observed three ne...
We demonstrate a novel multiple-valued logic (MVL) gate using series-connected resonant tunneling de...
This dissertation presents research on the application of resonant-tunneling diodes (RTDs) in multiv...
This dissertation presents research on the application of resonant-tunneling diodes (RTDs) in multiv...
The manufacturability of logic circuits based on quantum tunnelling devices, namely double-barrier r...
We present a novel multiple-threshold circuit using resonant-tunneling diodes (RTDs). The logic oper...
By using resonant-tunneling diodes (RTD's) and high electron mobility transistors (HEMT's), we imple...
Over the three-year course of this program, several issues in the device physics of resonant-tunneli...
We demonstrate unipolar complementary circuits consisting of a pair of resonant tunneling transistor...
The electrical and optical properties of an n-oped triple barrier resonant tunneling diode are inves...
Three-terminal devices based on resonant tunneling through two quantum barriers separated by a quant...
Three-terminal devices based on resonant tunneling through two quantum barriers separated by a quant...
The electrical and optical properties of an n-oped triple barrier resonant tunneling diode are inves...
The electrical and optical properties of an n-oped triple barrier resonant tunneling diode are inves...
We propose "novel symmetrical triple-barrier structures with outer wells" and analyze theoretically ...