We propose "novel symmetrical triple-barrier structures with outer wells" and analyze theoretically tunneling characteristics for this structure. First, analytical expressions of the transmission coefficient and the resonance condition have been derived. Next, we have examined numerically tunneling time which is related to device operation speed. It is found that outer well can control tunneling time and that the proposed structures would be useful for designing high speed tunneling device
The optimal resonant tunneling, or the complete tunneling transparence of a biased double-barrier re...
The present paper is devoted to the development of production process of transistor structures with ...
We report a theoretical study of InGaAs/AlAs triple barrier resonant tunnelling heterostructures whi...
We propose "novel symmetrical triple-barrier structures with outer wells" and analyze theoretically ...
Resonant tunneling in periodic N-fold barrier structures with asymmetrical double-barrier unit is th...
Resonant tunneling in periodic N-fold barrier structures with asymmetrical double-barrier unit is th...
In this work quasi-bound level energies, energy dependence of the transmission coefficients and nega...
In this paper the resonant tunneling through the double barrier structure with the parabolic quantum...
The present paper is devoted to the development of production process of transistor structures with ...
Abstract-A new resonant-tunneling diode with four potential barriers and three quantum wells is fabr...
A theoretical study of triple barrier resonant tunneling diode with multilayer GaAs/AlxGa1-xAs heter...
A double-well resonant tunneling structure has been investigated carefully using the nonequilibrium ...
The possibility of controlling tunneling of a quantum particle localized in the central well (M) of ...
The optimal resonant tunneling, or the complete tunneling transparence of a biased double-barrier re...
We report a theoretical study of InGaAs/AlAs triple barrier resonant tunnelling heterostructures whi...
The optimal resonant tunneling, or the complete tunneling transparence of a biased double-barrier re...
The present paper is devoted to the development of production process of transistor structures with ...
We report a theoretical study of InGaAs/AlAs triple barrier resonant tunnelling heterostructures whi...
We propose "novel symmetrical triple-barrier structures with outer wells" and analyze theoretically ...
Resonant tunneling in periodic N-fold barrier structures with asymmetrical double-barrier unit is th...
Resonant tunneling in periodic N-fold barrier structures with asymmetrical double-barrier unit is th...
In this work quasi-bound level energies, energy dependence of the transmission coefficients and nega...
In this paper the resonant tunneling through the double barrier structure with the parabolic quantum...
The present paper is devoted to the development of production process of transistor structures with ...
Abstract-A new resonant-tunneling diode with four potential barriers and three quantum wells is fabr...
A theoretical study of triple barrier resonant tunneling diode with multilayer GaAs/AlxGa1-xAs heter...
A double-well resonant tunneling structure has been investigated carefully using the nonequilibrium ...
The possibility of controlling tunneling of a quantum particle localized in the central well (M) of ...
The optimal resonant tunneling, or the complete tunneling transparence of a biased double-barrier re...
We report a theoretical study of InGaAs/AlAs triple barrier resonant tunnelling heterostructures whi...
The optimal resonant tunneling, or the complete tunneling transparence of a biased double-barrier re...
The present paper is devoted to the development of production process of transistor structures with ...
We report a theoretical study of InGaAs/AlAs triple barrier resonant tunnelling heterostructures whi...