Using a series connection of two specially designed resonant tunnelling diodes, we observed three negative differential resistance regions, resulting in four possible logic states. This behaviour can be expanded, at least in theory, to n tunnelling diodes, resulting in 2π - 1 times switching and 2π logic states. These new devices can be used for analogue/digital conversion and multivalued logic or as multistate memory cells using only a minimum in device area. © 1989, The Institution of Electrical Engineers. All rights reserved.status: publishe
The unique characteristics of resonant-tunneling (RT) devices, such as negative differential resista...
International Telemetering Conference Proceedings / October 09-11, 1973 / Sheraton Inn Northeast, Wa...
The manufacturability of logic circuits based on quantum tunnelling devices, namely double-barrier r...
We present a novel multiple-threshold circuit using resonant-tunneling diodes (RTDs). The logic oper...
Abstract-A new resonant-tunneling diode with four potential barriers and three quantum wells is fabr...
This dissertation presents research on the application of resonant-tunneling diodes (RTDs) in multiv...
This dissertation presents research on the application of resonant-tunneling diodes (RTDs) in multiv...
In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-...
By using resonant-tunneling diodes (RTD's) and high electron mobility transistors (HEMT's), we imple...
A multistable composite volt-ampere characteristic can be realized using a number of tunnel diodes. ...
A multistable composite volt-ampere characteristic can be realized using a number of tunnel diodes. ...
This thesis describes a mathematical-graphical analysis and some analog computer simulation studies ...
In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-...
This thesis describes a mathematical-graphical analysis and some analog computer simulation studies ...
We demonstrate a novel multiple-valued logic (MVL) gate using series-connected resonant tunneling de...
The unique characteristics of resonant-tunneling (RT) devices, such as negative differential resista...
International Telemetering Conference Proceedings / October 09-11, 1973 / Sheraton Inn Northeast, Wa...
The manufacturability of logic circuits based on quantum tunnelling devices, namely double-barrier r...
We present a novel multiple-threshold circuit using resonant-tunneling diodes (RTDs). The logic oper...
Abstract-A new resonant-tunneling diode with four potential barriers and three quantum wells is fabr...
This dissertation presents research on the application of resonant-tunneling diodes (RTDs) in multiv...
This dissertation presents research on the application of resonant-tunneling diodes (RTDs) in multiv...
In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-...
By using resonant-tunneling diodes (RTD's) and high electron mobility transistors (HEMT's), we imple...
A multistable composite volt-ampere characteristic can be realized using a number of tunnel diodes. ...
A multistable composite volt-ampere characteristic can be realized using a number of tunnel diodes. ...
This thesis describes a mathematical-graphical analysis and some analog computer simulation studies ...
In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-...
This thesis describes a mathematical-graphical analysis and some analog computer simulation studies ...
We demonstrate a novel multiple-valued logic (MVL) gate using series-connected resonant tunneling de...
The unique characteristics of resonant-tunneling (RT) devices, such as negative differential resista...
International Telemetering Conference Proceedings / October 09-11, 1973 / Sheraton Inn Northeast, Wa...
The manufacturability of logic circuits based on quantum tunnelling devices, namely double-barrier r...