Add to ORKGThe long-term transient spectra of heavily Mg-doped GaN have been investigated. As the excitation power density in-creased, the broad Mg-induced emission band showed blue-shift revealing characteristic of donor-acceptor pair (DAP) re-combination. We also observed an unusually slow intensity decay. The characteristic time constants range from several tenths to a few hundred seconds for emission between 360 and 460 nm. Our results are interpreted in terms of metastability due to compounded effects of differential DAP population and recombination rates and uneven acceptor distribution
Post-growth annealing and electron beam irradiation during cathodoluminescence were used to determin...
The mechanism of room-temperature optical transitions in a Mg-doped cubic GaN epilayer grown on GaAs...
A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN...
GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electr...
Mg doped cubic GaN layers were studied by steady state and time resolved photoluminescence. The blue...
Behaviors of the photoluminescence blue-band and near-bandgap peak and the relevant thermal ionizati...
We report the investigation of temperature and excitation power dependence in photoluminescence spec...
The blue Mg induced 2.8 eV photoluminescence (PL) band in metalorganic chemical vapor deposition gro...
The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in th...
The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in th...
Two Mg-doped GaN films with different doping concentrations were grown by a metalorganic chemical va...
Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the hal...
Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the hal...
The emission at {approx}2.8 eV from heavily doped p-GaN, known as the blue luminescence (BL), has be...
The luminescent properties of Mg-doped GaN have recently received particular attention, e.g., in the...
Post-growth annealing and electron beam irradiation during cathodoluminescence were used to determin...
The mechanism of room-temperature optical transitions in a Mg-doped cubic GaN epilayer grown on GaAs...
A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN...
GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electr...
Mg doped cubic GaN layers were studied by steady state and time resolved photoluminescence. The blue...
Behaviors of the photoluminescence blue-band and near-bandgap peak and the relevant thermal ionizati...
We report the investigation of temperature and excitation power dependence in photoluminescence spec...
The blue Mg induced 2.8 eV photoluminescence (PL) band in metalorganic chemical vapor deposition gro...
The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in th...
The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in th...
Two Mg-doped GaN films with different doping concentrations were grown by a metalorganic chemical va...
Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the hal...
Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the hal...
The emission at {approx}2.8 eV from heavily doped p-GaN, known as the blue luminescence (BL), has be...
The luminescent properties of Mg-doped GaN have recently received particular attention, e.g., in the...
Post-growth annealing and electron beam irradiation during cathodoluminescence were used to determin...
The mechanism of room-temperature optical transitions in a Mg-doped cubic GaN epilayer grown on GaAs...
A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN...