Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition

Two Mg-doped GaN films with different doping concentrations were grown by a metalorganic chemical vapor deposition technique. Photoluminescence (PL) experiments were carried out to investigate the optical properties of these films. For highly Mg-doped GaN, the PL spectra at 10 K are composed of a blue luminescence (BL) band at 2.857 eV and two excitonic luminescence lines at 3.342 eV and 3.282 eV, in addition to a L2 phonon replica at 3.212 eV. The intensity of the L1 line decreases monotonously with an increase,in temperature. However, the intensity of the L2 line first slowly increases at first, and then decreases quickly with an increase in temperature. The two lines are attributed to bound excitonic emissions at extended defects. The BL band is most likely due to the transition from deep donor Mg-V-N complex to Mg shallow acceptor. From the temperature dependence of the luminescence peak intensity of the BL band, the activation energy of acceptor Mg was found to be 290 meV. (C) 2003 American Vacuum Society