The luminescent properties of Mg-doped GaN have recently received particular attention, e.g., in the light of new theoretical calculations, where the deep 2.9 eV luminescence band was suggested to be the main optical signature of the substitutional Mg Ga acceptor, thus, having a rather large binding energy and a strong phonon coupling in optical transitions. We present new experimental data on homoepitaxial Mg-doped layers, which together with the previous collection of data give an improved experimental picture of the various luminescence features in Mg-doped GaN. In n-type GaN with moderate Mg doping (\u3c1018 cm−3), the 3.466 eV ABE1 acceptor bound exciton and the associated 3.27 eV donor-acceptor pair (DAP) band are the only strong phot...
Defects may cause compensation or act as recombination centers in Mg-doped GaN. Using hybrid functio...
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing ...
Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the hal...
The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in th...
The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in th...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
The optical signatures of Mg-related acceptors in GaN have been revisited in samples specifically gr...
The blue Mg induced 2.8 eV photoluminescence (PL) band in metalorganic chemical vapor deposition gro...
GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electr...
A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands r...
A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands r...
Photoluminescence of the dominant deep-level acceptor in high-purity freestanding GaN is studied ove...
Two Mg-doped GaN films with different doping concentrations were grown by a metalorganic chemical va...
Behaviors of the photoluminescence blue-band and near-bandgap peak and the relevant thermal ionizati...
Post-growth annealing and electron beam irradiation during cathodoluminescence were used to determin...
Defects may cause compensation or act as recombination centers in Mg-doped GaN. Using hybrid functio...
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing ...
Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the hal...
The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in th...
The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in th...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
The optical signatures of Mg-related acceptors in GaN have been revisited in samples specifically gr...
The blue Mg induced 2.8 eV photoluminescence (PL) band in metalorganic chemical vapor deposition gro...
GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electr...
A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands r...
A majority of the point defects in GaN that are responsible for broad photoluminescence (PL) bands r...
Photoluminescence of the dominant deep-level acceptor in high-purity freestanding GaN is studied ove...
Two Mg-doped GaN films with different doping concentrations were grown by a metalorganic chemical va...
Behaviors of the photoluminescence blue-band and near-bandgap peak and the relevant thermal ionizati...
Post-growth annealing and electron beam irradiation during cathodoluminescence were used to determin...
Defects may cause compensation or act as recombination centers in Mg-doped GaN. Using hybrid functio...
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing ...
Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on GaN substrates produced by the hal...