We have developed an actinic full-field inspection system to detect multilayer phase defect with dark field imaging. A new CCD camera was installed onto the system with an objective of throughput and inspection sensitivity improvement. As the result, the throughput was improved from 14.25 to 4.75 hours per plate, and the detection probability for 1.2 nm-high 40 nm-wide defect was found to be 95.7 %. This means that the system has a potential of its extendibility to beyond 22 nm HP inspection
The production of defect-free mask blanks remains a key challenge for EUV lithography. Mask-blank in...
OVERVIEW: The scaling down of cutting-edge semiconductor devices is just getting faster and faster. ...
The technology of mesoscopy brings into sight the microscopic level details of objects that are in d...
A prototype industrial defect inspection system, which can operate at speeds of up to 1 ms-1 and ove...
A prototype industrial defect inspection system, which can operate at speeds of up to 1 ms-1 and ove...
A prototype industrial defect inspection system, which can operate at speeds of up to 1 ms-1 and ove...
Dark field illumination (DFI) is an elegant inspection technique sometimes used to detect particles ...
We discuss the impact of various tool design perspectives on defect detection sensitivity for dark-f...
As a continuation of comparison experiments between EUV inspection and visible inspection of defects...
One of the most challenging requirements for the next generation EUV lithography is an extremely low...
An actinic EUV microscope for defect detection on mask blanks for operation in dark field using a ta...
The authors describe the implementation of a phase-retrieval algorithm to reconstruct phase and comp...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...
The production of defect-free mask blanks remains a key challenge for EUV lithography. Mask-blank in...
OVERVIEW: The scaling down of cutting-edge semiconductor devices is just getting faster and faster. ...
The technology of mesoscopy brings into sight the microscopic level details of objects that are in d...
A prototype industrial defect inspection system, which can operate at speeds of up to 1 ms-1 and ove...
A prototype industrial defect inspection system, which can operate at speeds of up to 1 ms-1 and ove...
A prototype industrial defect inspection system, which can operate at speeds of up to 1 ms-1 and ove...
Dark field illumination (DFI) is an elegant inspection technique sometimes used to detect particles ...
We discuss the impact of various tool design perspectives on defect detection sensitivity for dark-f...
As a continuation of comparison experiments between EUV inspection and visible inspection of defects...
One of the most challenging requirements for the next generation EUV lithography is an extremely low...
An actinic EUV microscope for defect detection on mask blanks for operation in dark field using a ta...
The authors describe the implementation of a phase-retrieval algorithm to reconstruct phase and comp...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...
The production of defect-free mask blanks remains a key challenge for EUV lithography. Mask-blank in...
OVERVIEW: The scaling down of cutting-edge semiconductor devices is just getting faster and faster. ...
The technology of mesoscopy brings into sight the microscopic level details of objects that are in d...