As a continuation of comparison experiments between EUV inspection and visible inspection of defects on EUVL mask blanks, we report on the result of an experiment where the EUV defect inspection tool is used to perform at-wavelength defect counting over 1 cm{sup 2} of EUVL mask blank. Initial EUV inspection found five defects over the scanned area and the subsequent optical scattering inspection was able to detect all of the five defects. Therefore, if there are any defects that are only detectable by EUV inspection, the density is lower than the order of unity per cm2. An upgrade path to substantially increase the overall throughput of the EUV inspection system is also identified in the manuscript
The availability of defect-free masks remains one of the key challenges for inserting extreme ultrav...
There is a strong demand for stand alone actinic tools for high volume manufacturing of EUV mask inf...
The high volume inspection equipment currently available to support development of EUV blanks is non...
The production of defect-free mask blanks remains a key challenge for extreme ultraviolet (EUV) lith...
This article is about the Actinic Inspection of Extreme Ultraviolet (EUV) lithography Programmed Mul...
The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection...
One of the most challenging requirements for the next generation EUV lithography is an extremely low...
The availability of defect-free masks remains one of the key challenges for inserting extreme ultrav...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...
We discuss the impact of various tool design perspectives on defect detection sensitivity for dark-f...
The production of defect-free mask blanks remains a key challenge for EUV lithography. Mask-blank in...
Mask inspection is essential for the success of any pattern-transfer lithography technology, and EUV...
This dissertation focuses on issues related to extreme ultraviolet (EUV) lithography masktechnology:...
The availability of defect-free masks remains one of the key challenges for inserting extreme ultrav...
There is a strong demand for stand alone actinic tools for high volume manufacturing of EUV mask inf...
The high volume inspection equipment currently available to support development of EUV blanks is non...
The production of defect-free mask blanks remains a key challenge for extreme ultraviolet (EUV) lith...
This article is about the Actinic Inspection of Extreme Ultraviolet (EUV) lithography Programmed Mul...
The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection...
One of the most challenging requirements for the next generation EUV lithography is an extremely low...
The availability of defect-free masks remains one of the key challenges for inserting extreme ultrav...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...
We discuss the impact of various tool design perspectives on defect detection sensitivity for dark-f...
The production of defect-free mask blanks remains a key challenge for EUV lithography. Mask-blank in...
Mask inspection is essential for the success of any pattern-transfer lithography technology, and EUV...
This dissertation focuses on issues related to extreme ultraviolet (EUV) lithography masktechnology:...
The availability of defect-free masks remains one of the key challenges for inserting extreme ultrav...
There is a strong demand for stand alone actinic tools for high volume manufacturing of EUV mask inf...
The high volume inspection equipment currently available to support development of EUV blanks is non...