Heterogeneous Integration Schemes of Compound Semiconductors for Advanced CMOS and More-than-Moore applications

The continuation of Moore’s law by conventional complementary metal oxide semiconductor (CMOS) scaling is becoming more and more challenging, requiring huge capital investments. On proposed scenario is the implementation of compound semiconductors as parts of advanced CMOS devices for More-than-Moore integration. The continuation of improved performance characteristics in CMOS manufacturing is coming to a critical point, where electrical properties of silicon introducing a hard stop. One discussed route to increase performance is the heterogeneous integration of compound semiconductors into state of the art CMOS circuits. While growth of III-Vs on silicon shows limited success till now, as well as growing III-Vs in small trench structures shows to be challenging, direct wafer bonding overcomes these challenges. Wafer bonding is the enabling process technology to make this happen. Two of the key wafer bonding techniques – low temperature fusion bonding as well as temporary bonding and de-bonding are the major subject of this contribution, introducing basic process flows and working principles for their CMOS integration