PHOTOCONDUCTIVITY IN a-Si:H AND a-SiXC1-,:H, CORRELATION WITH FHOTOLUMINESCENCE RESULTS

Abstract.- Photoconductivity and photoluminescence of a-Si: H and a-Sixcl-X: H films prepared by glow discharge or R.F sputterinq have been studied. For a-Si: H sputtered films, the photoconductivity is greatly increased with R.F power, substrate temperature and can be compared to values obtained for glow discharge films. The addition of a low carbon content (< 10 %) does not affect the photoconductivity but a higher content greatly decreases it. In conclusion, we deduced that the existence of a hiqh 1.2 eV photoluminescence peak is a necessary condition to obtain a good photoconduc-tivi ty. Introduction.- Many works have been made on photoconductivity [ l] and photolumines-cence [ 2] of a-Si: H films prepared by glow discharge or R.F sputtering. In this paper, we present an assumption on the structure of our a-Si: H sputtered films which will be developped in a futur work. This assumption is related to the results obtained by photoconductivity and photoluminescence measurements. We also presen