Photoluminescence decay measurements were performed in a series of a-Si1-xCx:H samples with 0 < x < 0.5 prepared in the low power regime, i.e. containing virtually no sp2 carbon. The decay is non-exponential and presents two peaks in the lifetime distribution for x > 0.2, one slow peak associated to a-Si:H-like luminescence and a fast peak that is responsible for the temperature independent visible luminescence. We conclude that the efficient temperature independent visible photoluminescence is due to a mechanism that is ineffective in a-Si:H, which we attribute to enhanced Coulomb interaction between electron and hole. © 1999 Elsevier Science Ltd. All rights reserved.1114193197Bullot, J., Schmidt, M.P., (1987) Phys. Status Solidi ...
A systematic investigation on photoluminescence (PL) properties of microcrystalline silicon ($\mu$c-...
International audienceThis study attempts to clarify the origin of the temperature dependence of the...
A nanoscale layer of amorphized silicon is obtained by implantations with silicon ions through a P-d...
Photoluminescence decay measurements were performed in a series of a-Si1-xCx:H samples with 0 < x < ...
Recent low temperature a-Si:H photoluminescence experiments show the presence of two peaks in the li...
The dependence of the photoluminescence (PL) decay on temperature and composition of a series of amo...
We have investigated the temperature dependence of photoluminescence in hydrogenated amorphous sili...
Time resolved photoluminescence of porous silicon at room temperature was measured for several emiss...
The temperature and excitation-intensity dependence of the ∼0.9 eV photoluminescence (PL) band has b...
In amorphous semiconductors, macroscopic properties are dominated by localized states. Photomodulate...
Amorphous hydrogenated silicon (a-Si:H) is a well-known semiconductor with metastable properties. Di...
Dangling bonds, as observed in ESR, act as both radiative and non-radiative recombination centers in...
Silicon dominates the electronics industry, but its poor optical properties mean that III–V compound...
The process responsible for visible-near infrared luminescence emission in Si nanostructures has bee...
Abstract.- Photoconductivity and photoluminescence of a-Si: H and a-Sixcl-X: H films prepared by glo...
A systematic investigation on photoluminescence (PL) properties of microcrystalline silicon ($\mu$c-...
International audienceThis study attempts to clarify the origin of the temperature dependence of the...
A nanoscale layer of amorphized silicon is obtained by implantations with silicon ions through a P-d...
Photoluminescence decay measurements were performed in a series of a-Si1-xCx:H samples with 0 < x < ...
Recent low temperature a-Si:H photoluminescence experiments show the presence of two peaks in the li...
The dependence of the photoluminescence (PL) decay on temperature and composition of a series of amo...
We have investigated the temperature dependence of photoluminescence in hydrogenated amorphous sili...
Time resolved photoluminescence of porous silicon at room temperature was measured for several emiss...
The temperature and excitation-intensity dependence of the ∼0.9 eV photoluminescence (PL) band has b...
In amorphous semiconductors, macroscopic properties are dominated by localized states. Photomodulate...
Amorphous hydrogenated silicon (a-Si:H) is a well-known semiconductor with metastable properties. Di...
Dangling bonds, as observed in ESR, act as both radiative and non-radiative recombination centers in...
Silicon dominates the electronics industry, but its poor optical properties mean that III–V compound...
The process responsible for visible-near infrared luminescence emission in Si nanostructures has bee...
Abstract.- Photoconductivity and photoluminescence of a-Si: H and a-Sixcl-X: H films prepared by glo...
A systematic investigation on photoluminescence (PL) properties of microcrystalline silicon ($\mu$c-...
International audienceThis study attempts to clarify the origin of the temperature dependence of the...
A nanoscale layer of amorphized silicon is obtained by implantations with silicon ions through a P-d...