PHOTOLUMINESCENCE STUDIES ON a-Si : H : Cl FILMS

We report photoluminescence measurements on a-Si : H : Cl. The spectra show that three different transitions can occur at 0.75, 0.95 and 1.3 eV, their individual presence being dependent on growth conditions. It is found that the gas composition in the reactor is the main parameter which influences the overall radiative efficiency by determining the quality of the films