Tin sulphide (SnS) has the potential to be used as a low cost absorber material for applications in thin film photovoltaic solar cells. In this work thin films of SnS were deposited by thermal evaporation onto glass substrates and the substrate temperature varied to alter the physical and chemical properties of the layers deposited. The variations of the grain size, texture coefficient, and dislocation density with the deposition conditions are reported in detail. The SnS layers deposited were free from pinholes, slightly tin-rich, consisted of large densely packed leaf-like grains, up to 6μm in diameter and preferential (040) orientatio
Tin (II) sulfide (SnS) thin films have been developed on highly conductive indium doped tin oxide (I...
Thin films of SnS (tin sulphide) were thermally evaporated onto glass and CdS/ITO (cadmium sulphide/...
The SnS films were grown on glass substrates using the thermal evaporation technique at different su...
Tin sulphide (SnS) has the potential to be used as a low cost absorber material for applications in ...
AbstractTin sulphide (SnS) has the potential to be used as a low-cost absorber material for applicat...
SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy bandgap phases e...
Thin films of tin sulphide $(Sn_xS_y)$ have been deposited on antimony-doped tin oxide-coated glass ...
Tin sulphide films were grown at different substrate temperatures by a thermal co-evaporation techni...
SnS is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS2, Sn2S3...
Thin films of tin sulphide (SnS) have been deposited using the thermal evaporation method and the la...
Polycrystalline SnS thin films were grown on glass substrates using a novel procedure involving a ch...
Tin sulphide (SnS) films have been grown by thermal evaporation onto glass substrates under differen...
[EN] The preparation and analysis of morphological, structural, optical, vibrational and composition...
Tin sulfide (SnS) is a semiconductor material with both an indirect and direct bandgap at 1.1 eV and...
Tin (II) sulfide (SnS) thin films have been developed on highly conductive indium doped tin oxide (I...
Tin (II) sulfide (SnS) thin films have been developed on highly conductive indium doped tin oxide (I...
Thin films of SnS (tin sulphide) were thermally evaporated onto glass and CdS/ITO (cadmium sulphide/...
The SnS films were grown on glass substrates using the thermal evaporation technique at different su...
Tin sulphide (SnS) has the potential to be used as a low cost absorber material for applications in ...
AbstractTin sulphide (SnS) has the potential to be used as a low-cost absorber material for applicat...
SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy bandgap phases e...
Thin films of tin sulphide $(Sn_xS_y)$ have been deposited on antimony-doped tin oxide-coated glass ...
Tin sulphide films were grown at different substrate temperatures by a thermal co-evaporation techni...
SnS is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS2, Sn2S3...
Thin films of tin sulphide (SnS) have been deposited using the thermal evaporation method and the la...
Polycrystalline SnS thin films were grown on glass substrates using a novel procedure involving a ch...
Tin sulphide (SnS) films have been grown by thermal evaporation onto glass substrates under differen...
[EN] The preparation and analysis of morphological, structural, optical, vibrational and composition...
Tin sulfide (SnS) is a semiconductor material with both an indirect and direct bandgap at 1.1 eV and...
Tin (II) sulfide (SnS) thin films have been developed on highly conductive indium doped tin oxide (I...
Tin (II) sulfide (SnS) thin films have been developed on highly conductive indium doped tin oxide (I...
Thin films of SnS (tin sulphide) were thermally evaporated onto glass and CdS/ITO (cadmium sulphide/...
The SnS films were grown on glass substrates using the thermal evaporation technique at different su...