[EN] The preparation and analysis of morphological, structural, optical, vibrational and compositional properties of tin monosulfide (SnS) thin films deposited on glass substrate by chemical spray pyrolysis is reported herein. The growth conditions were evaluated to reduce the presence of residual phases different to the SnS orthorhombic phase. X-ray diffraction spectra revealed the polycrystalline nature of the SnS films with orthorhombic structure and a preferential grain orientation along the (111) direction. At high substrate temperature (450A degrees C), a crystalline phase corresponding to the Sn2S3 phase was observed. Raman spectroscopy confirmed the dominance of the SnS phase and the presence of an additional Sn2S3 phase. Scanning e...
Thin films of SnS have been deposited on conducting glass substrates using spray pyrolysis. The spra...
Thin films of SnS have been deposited on conducting glass substrates using spray pyrolysis. The spra...
SnS is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS2, Sn2S3...
Thin films of tin sulphide $(Sn_xS_y)$ have been deposited on antimony-doped tin oxide-coated glass ...
[EN] SnS thin films were deposited by chemical spray pyrolysis using cost-effective and low-toxicity...
Thin films of tin sulphide (SnS) were prepared on glass substrates,using chemical spray pyrolysis te...
SnS thin films were prepared using automated chemical spray pyrolysis (CSP) technique. Single-phase,...
SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy bandgap phases e...
Thin films of SnS2 were prepared, as the absorber layer in solar cells, using an aqueous solution of...
The spray pyrolysis technique is employed to prepare thin films of SnS on glass substrates and SnS2 ...
The spray pyrolysis technique is employed to prepare thin films of SnS on glass substrates and SnS2 ...
Tin sulphide films have been grown by spray pyrolysis technique at different precursor concentration...
Tin sulphide films have been grown by spray pyrolysis technique at different precursor concentration...
Thin films of tin sulphide (SnS) have been grown by sulphurization of sputtered tin precursor layers...
SnS thin films were grown on glass substrates by a simple route named successive ion layer adsorptio...
Thin films of SnS have been deposited on conducting glass substrates using spray pyrolysis. The spra...
Thin films of SnS have been deposited on conducting glass substrates using spray pyrolysis. The spra...
SnS is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS2, Sn2S3...
Thin films of tin sulphide $(Sn_xS_y)$ have been deposited on antimony-doped tin oxide-coated glass ...
[EN] SnS thin films were deposited by chemical spray pyrolysis using cost-effective and low-toxicity...
Thin films of tin sulphide (SnS) were prepared on glass substrates,using chemical spray pyrolysis te...
SnS thin films were prepared using automated chemical spray pyrolysis (CSP) technique. Single-phase,...
SnS (tin sulphide) is of interest for use as an absorber layer and the wider energy bandgap phases e...
Thin films of SnS2 were prepared, as the absorber layer in solar cells, using an aqueous solution of...
The spray pyrolysis technique is employed to prepare thin films of SnS on glass substrates and SnS2 ...
The spray pyrolysis technique is employed to prepare thin films of SnS on glass substrates and SnS2 ...
Tin sulphide films have been grown by spray pyrolysis technique at different precursor concentration...
Tin sulphide films have been grown by spray pyrolysis technique at different precursor concentration...
Thin films of tin sulphide (SnS) have been grown by sulphurization of sputtered tin precursor layers...
SnS thin films were grown on glass substrates by a simple route named successive ion layer adsorptio...
Thin films of SnS have been deposited on conducting glass substrates using spray pyrolysis. The spra...
Thin films of SnS have been deposited on conducting glass substrates using spray pyrolysis. The spra...
SnS is of interest for use as an absorber layer and the wider energy bandgap phases e.g. SnS2, Sn2S3...