The IGBT press-pack provides low inductance and simple module stack for high power and high voltage applications. In this work, the reliability of IGBT Press-Pack power modules is experimentally tested under RBSOA conditions to investigate their limitation and current scalability. The internal current distribution is analyzed by detailed 3D FEM simulation. This work reveals that the uneven distribution of current density is caused by different impedance in each IGBT die current conducting path, due to skin and proximity effects during switching transient. Stray and mutual inductances also affect current paths depending upon the location of IGBT within the package. The unbalanced switching times become larger as the package size increases wi...
The Next Linear Collider (NLC) accelerator proposal at SLAC requires a highly efficient and reliable...
Power electronics plays an important role in a wide range of applications in order to achieve high e...
Insulated gate bipolar transistor (IGBT) modules, which can fail to stable short-circuit mode, have ...
Product development in the power electronic industry is characterized by short time-to-market and hi...
The clamping force is the most important parameter of Press Pack IGBTs (PP IGBTs) as it not only aff...
High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At pre...
Power Electronics uses semiconductor technology to convert and control electrical power. Demands for...
Press-pack IGBTs are increasing their market-share, especially for traction applications. As packagi...
The physics of the different failure modes that limit the maximum avalanche capability during unclam...
In this thesis the power cycling capability of individual press-pack IGBT chips is investigated. Pre...
On the basis of the development and application requirements of flexible DC transmission techniques,...
Press-pack insulated gate bipolar transistor (IGBT) device is the key component in the voltage sourc...
This paper discusses the reliability of an IGBT power electronics module. This work is part of a maj...
Power electronic modules undergo electro-thermal stresses due to power losses that lead to several k...
Abstract During the last few years, great progress in the development of a new power semiconductor d...
The Next Linear Collider (NLC) accelerator proposal at SLAC requires a highly efficient and reliable...
Power electronics plays an important role in a wide range of applications in order to achieve high e...
Insulated gate bipolar transistor (IGBT) modules, which can fail to stable short-circuit mode, have ...
Product development in the power electronic industry is characterized by short time-to-market and hi...
The clamping force is the most important parameter of Press Pack IGBTs (PP IGBTs) as it not only aff...
High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At pre...
Power Electronics uses semiconductor technology to convert and control electrical power. Demands for...
Press-pack IGBTs are increasing their market-share, especially for traction applications. As packagi...
The physics of the different failure modes that limit the maximum avalanche capability during unclam...
In this thesis the power cycling capability of individual press-pack IGBT chips is investigated. Pre...
On the basis of the development and application requirements of flexible DC transmission techniques,...
Press-pack insulated gate bipolar transistor (IGBT) device is the key component in the voltage sourc...
This paper discusses the reliability of an IGBT power electronics module. This work is part of a maj...
Power electronic modules undergo electro-thermal stresses due to power losses that lead to several k...
Abstract During the last few years, great progress in the development of a new power semiconductor d...
The Next Linear Collider (NLC) accelerator proposal at SLAC requires a highly efficient and reliable...
Power electronics plays an important role in a wide range of applications in order to achieve high e...
Insulated gate bipolar transistor (IGBT) modules, which can fail to stable short-circuit mode, have ...