On the basis of the development and application requirements of flexible DC transmission techniques, a 1 kA/10 kV half-bridge IGBT press-pack module is studied. The module is composed of three subunits in series, and each subunit consists of IGBT chips in parallel. In order to solve the problem of chips failure caused by non-uniform rigid-contacting pressure in the press-pack modules, the elastic-contacting structure is designed to ensure excellent electrical connection between chips and contact terminal. During the operating conditions, the heat generated by IGBT chips can induce the increasing of internal temperature of the module, affecting the reliability of the module. A cooling structure is introduced between the subunits to solve the...
In electric vehicles and hybrid electric vehicles, insulated-gate bipolar transistor (IGBT) power mo...
The thermal behaviour of an IGBT module was investigated, especially with respect to the module bein...
Thermal stress in IGBT power module can lead to sever thermal reliability problems such as module de...
High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At pre...
High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At pre...
Abstract A new IGBT press pack package was developed to meet increasingly challenging requirements f...
An alternative integration scheme for a half-bridge switch using 70 μm thin Si IGBTs and diodes is p...
The main part of a static converter is the switch function. Insulated Gate Bipolar Transistors (IGBT...
<p>Interface contact through pressure is the way for press-pack insulated gate bipolar transistor (I...
The main part of a static converter is the switch function. Insulated Gate Bipolar Transistors (IGBT...
An alternative integration scheme for a half-bridge switch using 70 μm thin Si IGBTs and diodes is p...
As an increasing attention towards sustainable development of energy and environment, the power elec...
As an increasing attention towards sustainable development of energy and environment, the power elec...
This paper describes a new packaging technique for improving the thermal and switching characteristi...
The IGBT press-pack provides low inductance and simple module stack for high power and high voltage ...
In electric vehicles and hybrid electric vehicles, insulated-gate bipolar transistor (IGBT) power mo...
The thermal behaviour of an IGBT module was investigated, especially with respect to the module bein...
Thermal stress in IGBT power module can lead to sever thermal reliability problems such as module de...
High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At pre...
High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At pre...
Abstract A new IGBT press pack package was developed to meet increasingly challenging requirements f...
An alternative integration scheme for a half-bridge switch using 70 μm thin Si IGBTs and diodes is p...
The main part of a static converter is the switch function. Insulated Gate Bipolar Transistors (IGBT...
<p>Interface contact through pressure is the way for press-pack insulated gate bipolar transistor (I...
The main part of a static converter is the switch function. Insulated Gate Bipolar Transistors (IGBT...
An alternative integration scheme for a half-bridge switch using 70 μm thin Si IGBTs and diodes is p...
As an increasing attention towards sustainable development of energy and environment, the power elec...
As an increasing attention towards sustainable development of energy and environment, the power elec...
This paper describes a new packaging technique for improving the thermal and switching characteristi...
The IGBT press-pack provides low inductance and simple module stack for high power and high voltage ...
In electric vehicles and hybrid electric vehicles, insulated-gate bipolar transistor (IGBT) power mo...
The thermal behaviour of an IGBT module was investigated, especially with respect to the module bein...
Thermal stress in IGBT power module can lead to sever thermal reliability problems such as module de...