We studied the electronic and magnetic properties of (Al1−yMny)GaP2 (Ga-rich) and Al(Ga1−yMny)P2 (Al-rich) with y = 0.03125, 0.0625, 0.09375, and 0.125 by using the first-principles calculations. The ferromagnetic Mn-doped AlGaP2 chalcopyrite is the most energetically favorable one. The spin polarized Al(GaMn)P2 state (Al-rich system) is more stable than spin polarized (AlMn)GaP2 state (Ga-rich) with the magnetic moment of 3.8 μB/Mn. The Mn-doped AlGaP2 yields strong half-metallic ground states. The states of host Al, Ga, or P atoms at the Fermi level are mainly a P-3p character, which mediates a strong interaction between the Mn-3d and P-3p states
Structural, electronic, and magnetic properties of ternary CdMAs2 (M = Sc, Ti, and V) compounds in t...
Heavily Mn-doped II-VI-V-2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositin...
Structural, electronic, and magnetic properties of ternary CdMAs2 (M = Sc, Ti, and V) compounds in t...
We studied the electronic and magnetic properties for the Mn-doped chalcopyrite AlGaP2 semiconductor...
Ab-initio calculations are performed to examine the electronic structures and magnetic properties of...
A first-principles study of the electronic structure and magnetic properties of the Heusler compound...
A first-principles study of the electronic structure and magnetic properties of the Heusler compound...
High concentration of Mn atoms has been incorporated in the surface region of II-IV-V2 type chalcopy...
We have synthesized two new chalcopyrite compounds: MnGeP2 and MnGeAs2. Total energy calculations pr...
The ab initio calculations of electronic and magnetic properties of chalcopyrites doped with 3d meta...
Currently, complex ferromagnetic semiconductor systems are of significant interest due to their p...
Ternary diamond-like compounds in II-IV-V2 semiconductor system heavily-doped with transition d-elem...
A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has b...
Accurate ab initio full-potential augmented plane wave (FP-LAPW) electronic calculations within gene...
Heavily Mn-doped II–VI–V2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositing...
Structural, electronic, and magnetic properties of ternary CdMAs2 (M = Sc, Ti, and V) compounds in t...
Heavily Mn-doped II-VI-V-2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositin...
Structural, electronic, and magnetic properties of ternary CdMAs2 (M = Sc, Ti, and V) compounds in t...
We studied the electronic and magnetic properties for the Mn-doped chalcopyrite AlGaP2 semiconductor...
Ab-initio calculations are performed to examine the electronic structures and magnetic properties of...
A first-principles study of the electronic structure and magnetic properties of the Heusler compound...
A first-principles study of the electronic structure and magnetic properties of the Heusler compound...
High concentration of Mn atoms has been incorporated in the surface region of II-IV-V2 type chalcopy...
We have synthesized two new chalcopyrite compounds: MnGeP2 and MnGeAs2. Total energy calculations pr...
The ab initio calculations of electronic and magnetic properties of chalcopyrites doped with 3d meta...
Currently, complex ferromagnetic semiconductor systems are of significant interest due to their p...
Ternary diamond-like compounds in II-IV-V2 semiconductor system heavily-doped with transition d-elem...
A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has b...
Accurate ab initio full-potential augmented plane wave (FP-LAPW) electronic calculations within gene...
Heavily Mn-doped II–VI–V2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositing...
Structural, electronic, and magnetic properties of ternary CdMAs2 (M = Sc, Ti, and V) compounds in t...
Heavily Mn-doped II-VI-V-2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositin...
Structural, electronic, and magnetic properties of ternary CdMAs2 (M = Sc, Ti, and V) compounds in t...