We have synthesized two new chalcopyrite compounds: MnGeP2 and MnGeAs2. Total energy calculations predicted that both compounds are indirect semiconductors with band gaps of 0.24 and 0.06 eV, respectively. Both compounds exhibit room-temperature ferromagnetism with TC, 320 and 340 K for MnGeP2 and MnGeAs2, respectively, based on magnetization and resistance measurements. We have also observed the anomalous Hall effect, indicating polarization of the carriers
We studied the electronic and magnetic properties of (Al1−yMny)GaP2 (Ga-rich) and Al(Ga1−yMny)P2 (Al...
We report on a comprehensive combined experimental and theoretical study of curie temperature trends...
We studied the electronic and magnetic properties for the Mn-doped chalcopyrite AlGaP2 semiconductor...
High concentration of Mn atoms has been incorporated in the surface region of II-IV-V2 type chalcopy...
Ternary diamond-like compounds in II-IV-V2 semiconductor system heavily-doped with transition d-elem...
We have studied the magneto-transport properties of a chalcopyrite MnGeP2 thin film grown on GaAs(1 ...
Heavily Mn-doped II-VI-V-2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositin...
Heavily Mn-doped II-VI-V-2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositin...
Heavily Mn-doped II–VI–V2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositing...
Currently, complex ferromagnetic semiconductor systems are of significant interest due to their p...
The chalcopyrite CdGeP<sub>2</sub> doped with Mn have been recently found to exhibit room-temperatur...
We have studied the magneto-transport properties of ferromagnetic MnGeP2 semiconductor thin films de...
Photoemission study of room-temperature ferromagnetism in diluted magnetic semiconductor ZnGeP2:M
MnGeAs2 and MnGeP2 thin films were deposited on GaAs and Si substrates. For these film samples, room...
Existing semiconductor electronic and photonic devices utilize the charge on electrons and holes in ...
We studied the electronic and magnetic properties of (Al1−yMny)GaP2 (Ga-rich) and Al(Ga1−yMny)P2 (Al...
We report on a comprehensive combined experimental and theoretical study of curie temperature trends...
We studied the electronic and magnetic properties for the Mn-doped chalcopyrite AlGaP2 semiconductor...
High concentration of Mn atoms has been incorporated in the surface region of II-IV-V2 type chalcopy...
Ternary diamond-like compounds in II-IV-V2 semiconductor system heavily-doped with transition d-elem...
We have studied the magneto-transport properties of a chalcopyrite MnGeP2 thin film grown on GaAs(1 ...
Heavily Mn-doped II-VI-V-2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositin...
Heavily Mn-doped II-VI-V-2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositin...
Heavily Mn-doped II–VI–V2 semiconductors, such as CdGeP2 and ZnGeP2 have been prepared by depositing...
Currently, complex ferromagnetic semiconductor systems are of significant interest due to their p...
The chalcopyrite CdGeP<sub>2</sub> doped with Mn have been recently found to exhibit room-temperatur...
We have studied the magneto-transport properties of ferromagnetic MnGeP2 semiconductor thin films de...
Photoemission study of room-temperature ferromagnetism in diluted magnetic semiconductor ZnGeP2:M
MnGeAs2 and MnGeP2 thin films were deposited on GaAs and Si substrates. For these film samples, room...
Existing semiconductor electronic and photonic devices utilize the charge on electrons and holes in ...
We studied the electronic and magnetic properties of (Al1−yMny)GaP2 (Ga-rich) and Al(Ga1−yMny)P2 (Al...
We report on a comprehensive combined experimental and theoretical study of curie temperature trends...
We studied the electronic and magnetic properties for the Mn-doped chalcopyrite AlGaP2 semiconductor...