The diffraction properties of a large Czochralski grown Si1−xGex(0.02≤x≤0.07) gradient crystal have been studied by means of a triple-crystal diffractometer using 120 keV synchrotron radiation. Over a crystal length of 40 mm a homogeneous variation of the lattice parameter by 1.7×10−3 has been observed. The diffraction pattern measured in transmission geometry at low Ge content showed a FWHM of 14.8 arcsec at a peak reflectivity of 96% disregarding absorption. With increasing Ge content the FWHM of the diffraction pattern increases up to 49 arcsec with the peak reflectivity decreasing to a value of 72%. Taking absorption into account the effective reflectivity for 120 keV photons varies between 68% and 50%, which is surprisingly high. This ...
An experimental study on the method of indentations for bent crystals to realize a hard X-ray Laue l...
The 220 reflectivity curve of a 4 mm thick Si crystal is measured in asymmetric transmission (Laue) ...
X-ray reflection properties are reported of annealed Czochralski-grown silicon (ACS) single crystals...
The diffraction properties of a large Czochralski grown Si1−xGex(0.02≤x≤0.07) gradient crystal have ...
In a large Czochralski-grown Si1-xGex (0.02 \leq x \leq 0.07) gradient crystal, diffraction patterns...
Two theoretical models for the description of the diffraction properties of gradient crystals have b...
Two different kinds of monochromator/analyzer crystals for high-energy synchrotron radiation diffrac...
Using the BESSY I wavelength shifter (WLS) beamline we have examined the energy resolution of a late...
Structural parameters of bulk crystalline materials can be accessed in a damage-free manner by high-...
A graded Si1-xGex crystal has been manufactured for operation with high-energy protons to excite coh...
We present a series of x‐ray reflectivity measurements performed on annealed Czochralski grown silic...
Structural imperfections were studied in Si1 - xGex (1 - 9 at. % Ge) solid-solution single crystals ...
The Si matrix of two Si$-$TaSi$_2$in situ composites grown in the 111 direction have been characteri...
A graded Si1-xGex crystal has been manufactured for operation with high-energy protons to excite coh...
The vertical divergences of bending magnet and wiggler synchrotron sources are generally considerabl...
An experimental study on the method of indentations for bent crystals to realize a hard X-ray Laue l...
The 220 reflectivity curve of a 4 mm thick Si crystal is measured in asymmetric transmission (Laue) ...
X-ray reflection properties are reported of annealed Czochralski-grown silicon (ACS) single crystals...
The diffraction properties of a large Czochralski grown Si1−xGex(0.02≤x≤0.07) gradient crystal have ...
In a large Czochralski-grown Si1-xGex (0.02 \leq x \leq 0.07) gradient crystal, diffraction patterns...
Two theoretical models for the description of the diffraction properties of gradient crystals have b...
Two different kinds of monochromator/analyzer crystals for high-energy synchrotron radiation diffrac...
Using the BESSY I wavelength shifter (WLS) beamline we have examined the energy resolution of a late...
Structural parameters of bulk crystalline materials can be accessed in a damage-free manner by high-...
A graded Si1-xGex crystal has been manufactured for operation with high-energy protons to excite coh...
We present a series of x‐ray reflectivity measurements performed on annealed Czochralski grown silic...
Structural imperfections were studied in Si1 - xGex (1 - 9 at. % Ge) solid-solution single crystals ...
The Si matrix of two Si$-$TaSi$_2$in situ composites grown in the 111 direction have been characteri...
A graded Si1-xGex crystal has been manufactured for operation with high-energy protons to excite coh...
The vertical divergences of bending magnet and wiggler synchrotron sources are generally considerabl...
An experimental study on the method of indentations for bent crystals to realize a hard X-ray Laue l...
The 220 reflectivity curve of a 4 mm thick Si crystal is measured in asymmetric transmission (Laue) ...
X-ray reflection properties are reported of annealed Czochralski-grown silicon (ACS) single crystals...