Structural parameters of bulk crystalline materials can be accessed in a damage-free manner by high-energy x-ray diffraction. Specific parts of the sample can be characterized if they are distinguished by the lattice spacings. This technique is applied for the first time to massive Si1-xGex crystals with locally varying concentrations x. The data reveal e.g. an unusual lattice distortion with an in-plane expansion and an out-of-plane contraction if the samples are deposited at high temperature (1350 K). This is opposite to a distortion inferred from the difference in the lattice constants of Si and Ge
10.1007/s00339-004-3076-1Applied Physics A: Materials Science and Processing8161163-1166APAM
The concept of growing epitaxial Ge and SiGe crystals onto tall Si pillars may provide a means for s...
X-ray phase-contrast topography has been improved by using phase modulation and computing techniques...
In a large Czochralski-grown Si1-xGex (0.02 \leq x \leq 0.07) gradient crystal, diffraction patterns...
The diffraction properties of a large Czochralski grown Si1−xGex(0.02≤x≤0.07) gradient crystal have ...
Structural imperfections were studied in Si1 - xGex (1 - 9 at. % Ge) solid-solution single crystals ...
X-ray diffraction techniques were employed here to study several structural and chemical properties ...
Two theoretical models for the description of the diffraction properties of gradient crystals have b...
Lattice strain and static disorder present in Si1-xGex alloys forming Si/Si1-xGex/Si heterostructure...
Ge/Si(001) heterostructures grown by means of ultrahigh vacuum chemical vapor deposition have been i...
A graded Si1-xGex crystal has been manufactured for operation with high-energy protons to excite coh...
Results of experiments dedicated to the study of the structure under high pressure of amorphous Ge (...
Double crystal and triple axis X-ray diffractometry was used to characterize the structural properti...
A graded Si1-xGex crystal has been manufactured for operation with high-energy protons to excite coh...
Two different kinds of monochromator/analyzer crystals for high-energy synchrotron radiation diffrac...
10.1007/s00339-004-3076-1Applied Physics A: Materials Science and Processing8161163-1166APAM
The concept of growing epitaxial Ge and SiGe crystals onto tall Si pillars may provide a means for s...
X-ray phase-contrast topography has been improved by using phase modulation and computing techniques...
In a large Czochralski-grown Si1-xGex (0.02 \leq x \leq 0.07) gradient crystal, diffraction patterns...
The diffraction properties of a large Czochralski grown Si1−xGex(0.02≤x≤0.07) gradient crystal have ...
Structural imperfections were studied in Si1 - xGex (1 - 9 at. % Ge) solid-solution single crystals ...
X-ray diffraction techniques were employed here to study several structural and chemical properties ...
Two theoretical models for the description of the diffraction properties of gradient crystals have b...
Lattice strain and static disorder present in Si1-xGex alloys forming Si/Si1-xGex/Si heterostructure...
Ge/Si(001) heterostructures grown by means of ultrahigh vacuum chemical vapor deposition have been i...
A graded Si1-xGex crystal has been manufactured for operation with high-energy protons to excite coh...
Results of experiments dedicated to the study of the structure under high pressure of amorphous Ge (...
Double crystal and triple axis X-ray diffractometry was used to characterize the structural properti...
A graded Si1-xGex crystal has been manufactured for operation with high-energy protons to excite coh...
Two different kinds of monochromator/analyzer crystals for high-energy synchrotron radiation diffrac...
10.1007/s00339-004-3076-1Applied Physics A: Materials Science and Processing8161163-1166APAM
The concept of growing epitaxial Ge and SiGe crystals onto tall Si pillars may provide a means for s...
X-ray phase-contrast topography has been improved by using phase modulation and computing techniques...