The scientific interest towards antiferromagnetic (AFM) materials has been increasing continuously mainly because of their crucial role in the operating principle of modern, miniaturized spintronic devices. In spin valves and tunnel junctions, a fine control of the magnetization reversal process in the ferromagnetic (FM) electrodes is usually achieved through the interface exchange coupling with an AFM layer [1, 2]: the torque action exerted by the interfacial AFM spins on the FM ones brings about the insurgence of an unidirectional exchange anisotropy for the FM magnetization, and then of the exchange bias (EB) effect. Moreover, as an alternative to conventional spintronics based on ferromagnets, recent studies have disclosed magnetoresist...
We have studied the magnetic exchange coupling in an antiferromagnetic(AFM)/ferromagnetic(FM) IrMn[1...
Nowadays, the pressing demand for miniaturization of magnetic devices triggers an increasing interes...
The magnetothermal behavior of antiferromagnetic IrMn layers of different thickness (tAFM = 3, 6, 10...
The scientific interest towards antiferromagnetic (AFM) materials has been increasing continuously m...
It is now largely demonstrated that magnetic systems structured on a nanometric length scale may exh...
none8noA comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagn...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
We present a comprehensive study of the exchange bias phenomenon (EB) in an antiferromagnetic (AF)/f...
The interest towards antiferromagnetic (AFM) materials is continuously increasing mainly because of ...
The study of the exchange bias (EB) interaction between ferromagnetic (FM) and antiferromagnetic (AF...
We have studied the magnetic exchange coupling in an antiferromagnetic(AFM)/ferromagnetic(FM) IrMn[1...
Nowadays, the pressing demand for miniaturization of magnetic devices triggers an increasing interes...
The magnetothermal behavior of antiferromagnetic IrMn layers of different thickness (tAFM = 3, 6, 10...
The scientific interest towards antiferromagnetic (AFM) materials has been increasing continuously m...
It is now largely demonstrated that magnetic systems structured on a nanometric length scale may exh...
none8noA comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagn...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
We present a comprehensive study of the exchange bias phenomenon (EB) in an antiferromagnetic (AF)/f...
The interest towards antiferromagnetic (AFM) materials is continuously increasing mainly because of ...
The study of the exchange bias (EB) interaction between ferromagnetic (FM) and antiferromagnetic (AF...
We have studied the magnetic exchange coupling in an antiferromagnetic(AFM)/ferromagnetic(FM) IrMn[1...
Nowadays, the pressing demand for miniaturization of magnetic devices triggers an increasing interes...
The magnetothermal behavior of antiferromagnetic IrMn layers of different thickness (tAFM = 3, 6, 10...