It is now largely demonstrated that magnetic systems structured on a nanometric length scale may exhibit peculiar magnetic properties, generally indicated as disordered magnetism effects, originating from the concomitant presence of topological disorder and competing magnetic interactions, as a consequence of the lack of structural periodicity. It is to be expected that this complex mix of magnetic effects play a relevant role also in the behavior of exchange coupled antiferromagnetic (AFM)/ferromagnetic (FM) systems, where the torque action exerted by the interfacial AFM spins on the FM ones brings about the insurgence of an unidirectional exchange anisotropy for the FM magnetization, and then the exchange bias (EB) effect. In this work ...
The interest towards antiferromagnetic (AFM) materials is continuously increasing mainly because of ...
Nowadays, several advanced magnetic and magnetoelectronic devices rely on interface exchange couplin...
The magnetothermal behavior of antiferromagnetic IrMn layers of different thickness (tAFM = 3, 6, 10...
The scientific interest towards antiferromagnetic (AFM) materials has been increasing continuously m...
The study of the exchange bias (EB) interaction between ferromagnetic (FM) and antiferromagnetic (AF...
none8noA comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagn...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
We present a comprehensive study of the exchange bias phenomenon (EB) in an antiferromagnetic (AF)/f...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
Nowadays, the pressing demand for miniaturization of magnetic devices triggers an increasing interes...
The scientific interest towards antiferromagnetic (AFM) materials has been increasing continuously m...
The interest towards antiferromagnetic (AFM) materials is continuously increasing mainly because of ...
Nowadays, several advanced magnetic and magnetoelectronic devices rely on interface exchange couplin...
The magnetothermal behavior of antiferromagnetic IrMn layers of different thickness (tAFM = 3, 6, 10...
The scientific interest towards antiferromagnetic (AFM) materials has been increasing continuously m...
The study of the exchange bias (EB) interaction between ferromagnetic (FM) and antiferromagnetic (AF...
none8noA comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagn...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
We present a comprehensive study of the exchange bias phenomenon (EB) in an antiferromagnetic (AF)/f...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
A comprehensive description of the exchange bias phenomenon in an antiferromagnetic/ferromagnetic Ir...
Nowadays, the pressing demand for miniaturization of magnetic devices triggers an increasing interes...
The scientific interest towards antiferromagnetic (AFM) materials has been increasing continuously m...
The interest towards antiferromagnetic (AFM) materials is continuously increasing mainly because of ...
Nowadays, several advanced magnetic and magnetoelectronic devices rely on interface exchange couplin...
The magnetothermal behavior of antiferromagnetic IrMn layers of different thickness (tAFM = 3, 6, 10...