Add to ORKGHigh-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Si incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Si into the layers is interpreted as a result of increased spin orbit coupling in the (Ga,Mn)(Bi,As) layers
Although conventional semiconductors form the basis for electronic and photonic devices, it would be...
The discovery of carrier-mediated ferromagnetism in (III,Mn)V and (II,Mn)VI dilute magnetic semicond...
The diluted ferromagnetic semiconductor (GaMn)As has been grown by low temperature molecular beam ep...
High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the l...
Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute mag...
Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute mag...
Structural and magnetic properties of thin films of the (Ga,Mn)(Bi,As) quaternary diluted magnetic s...
We have thoroughly investigated the planar Hall effect (PHE) in the epitaxial layers of the quaterna...
Abstract The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on ...
Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, e...
Ferromagnetic semiconductor thin layers of the quaternary (Ga,Mn)(Bi,As) and reference, ternary (Ga,...
Ferromagnetic semiconductor thin layers of the quaternary (Ga,Mn)(Bi,As) and reference, ternary (Ga,...
The impact of bismuth incorporation into the epitaxial layer of a (Ga,Mn)As dilute ferromagnetic sem...
The III-V ferromagnetic semiconductor Gallium Manganese Arsenide ((Ga,Mn)As) is one of the most inte...
Introduction of high density of Mn in GaAs by low temperature molecular beam epitaxy results in a ho...
Although conventional semiconductors form the basis for electronic and photonic devices, it would be...
The discovery of carrier-mediated ferromagnetism in (III,Mn)V and (II,Mn)VI dilute magnetic semicond...
The diluted ferromagnetic semiconductor (GaMn)As has been grown by low temperature molecular beam ep...
High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the l...
Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute mag...
Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute mag...
Structural and magnetic properties of thin films of the (Ga,Mn)(Bi,As) quaternary diluted magnetic s...
We have thoroughly investigated the planar Hall effect (PHE) in the epitaxial layers of the quaterna...
Abstract The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on ...
Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, e...
Ferromagnetic semiconductor thin layers of the quaternary (Ga,Mn)(Bi,As) and reference, ternary (Ga,...
Ferromagnetic semiconductor thin layers of the quaternary (Ga,Mn)(Bi,As) and reference, ternary (Ga,...
The impact of bismuth incorporation into the epitaxial layer of a (Ga,Mn)As dilute ferromagnetic sem...
The III-V ferromagnetic semiconductor Gallium Manganese Arsenide ((Ga,Mn)As) is one of the most inte...
Introduction of high density of Mn in GaAs by low temperature molecular beam epitaxy results in a ho...
Although conventional semiconductors form the basis for electronic and photonic devices, it would be...
The discovery of carrier-mediated ferromagnetism in (III,Mn)V and (II,Mn)VI dilute magnetic semicond...
The diluted ferromagnetic semiconductor (GaMn)As has been grown by low temperature molecular beam ep...