Effect of Annealing on Magnetic and Magnetotransport Properties of Dilute Magnetic Semiconductor Ga(1-X)Mn(X)As

Although conventional semiconductors form the basis for electronic and photonic devices, it would be advantageous to endow semiconductors with additional magnetic properties. MBE-grown (Ga,Mn)As ferromagnetic semiconductors opens up new possibilites for electronic, magnetooptics, and photonic applications which are compatible with integrated circuit architecture. The discovery of the carrier induced ferromagnetism in III-V (In,Mn)As and (GA,MN)As dilute magnetic semiconductor (DMS) have been much interest from the industrial veiwpoint because of their potential application in spintronic devices. In this research work effect of annealing on the structural, electronic, optical and magnetic properties of III-V dilute magnetic semiconductors thin films of Ga₁-xMnxAs has been discussed and results of temperature dependent magnetoresistance, Hall effect of various as grown as well as annealed samples has been presented. Ga₁-xMnxAs thin films were grown on semi insulating chromium oxide doped GaAs(001) substrates by low temperature molecular beam epitaxy using solid sources of Ga, Mn and As. X-ray diffraction measurements reveal that crystal structure of homogeneous (Ga,Mn)As film is zinc-blend. The Raman spectra from the films also confirm the phase of GaAs. Annealing at the lower temperature enchances the crystalline structure and transport properties