AbstractIn the next half decade, the split in demand for GaAs substrates between device companies and epiwafer suppliers will only widen. Device makers have products based on MESFET devices, which are largely implant-based. Newer devices are virtually all based on epitaxy. The demand for the newer devices is increasing at a faster rate than that for MESFETs. Thus the demand for epiwafers is set to increase more strongly over the next five years
A duet of papers given at Compound Semiconductor Mantech in New Orleans starts with RF Micro Devices...
AbstractAt the end of an eventful year for III–Vs it is worth pausing to recollect the gains, before...
AbstractEpi is seldom out of the news these days. In this issue you will read of yet more incredible...
AbstractIn the next half decade, the split in demand for GaAs substrates between device companies an...
AbstractAs we saw in Part 1 in the last issue, the challenges and opportunities presented by product...
AbstractThe progress of production epitaxy is relentless, and the market success of this tier of the...
AbstractThe second tier in the gallium arsenide electronics supply chain is that of merchant epitaxi...
AbstractSemi-insulating (SI) GaAs substrates could be said to be the raison d'etre for the GaAs elec...
AbstractThere can be little doubt that there is great optimism in the feature for the production of ...
AbstractWith its increasing success in telecommunications and other markets, GaAs device makers are ...
AbstractRecent events beg the question: “When is an epi equipment vendor not an epi equipment vendor...
AbstractThe boom in the compound semiconductor industry was evident at both the GaAs MANTECH confere...
AbstractThe second tier in the gallium arsenide electronics supply chain is that of merchant epitaxi...
AbstractThe progress of production epitaxy is relentless, and the market success of this tier of the...
AbstractEpitaxial technology is coming into its own. The reactors are good enough to achieve uniform...
A duet of papers given at Compound Semiconductor Mantech in New Orleans starts with RF Micro Devices...
AbstractAt the end of an eventful year for III–Vs it is worth pausing to recollect the gains, before...
AbstractEpi is seldom out of the news these days. In this issue you will read of yet more incredible...
AbstractIn the next half decade, the split in demand for GaAs substrates between device companies an...
AbstractAs we saw in Part 1 in the last issue, the challenges and opportunities presented by product...
AbstractThe progress of production epitaxy is relentless, and the market success of this tier of the...
AbstractThe second tier in the gallium arsenide electronics supply chain is that of merchant epitaxi...
AbstractSemi-insulating (SI) GaAs substrates could be said to be the raison d'etre for the GaAs elec...
AbstractThere can be little doubt that there is great optimism in the feature for the production of ...
AbstractWith its increasing success in telecommunications and other markets, GaAs device makers are ...
AbstractRecent events beg the question: “When is an epi equipment vendor not an epi equipment vendor...
AbstractThe boom in the compound semiconductor industry was evident at both the GaAs MANTECH confere...
AbstractThe second tier in the gallium arsenide electronics supply chain is that of merchant epitaxi...
AbstractThe progress of production epitaxy is relentless, and the market success of this tier of the...
AbstractEpitaxial technology is coming into its own. The reactors are good enough to achieve uniform...
A duet of papers given at Compound Semiconductor Mantech in New Orleans starts with RF Micro Devices...
AbstractAt the end of an eventful year for III–Vs it is worth pausing to recollect the gains, before...
AbstractEpi is seldom out of the news these days. In this issue you will read of yet more incredible...