AbstractIn the next half decade, the split in demand for GaAs substrates between device companies and epiwafer suppliers will only widen. Device makers have products based on MESFET devices, which are largely implant-based. Newer devices are virtually all based on epitaxy. The demand for the newer devices is increasing at a faster rate than that for MESFETs. Thus the demand for epiwafers is set to increase more strongly over the next five years
The 2004 GaAs device market grew by 12 percent over 2003, boosted by the cellular handset market, wh...
AbstractThe progress of production epitaxy is relentless, and the market success of this tier of the...
GaAs MESFETs have traditionally been the preferred technology for most RFIC applications. The past f...
AbstractIn the next half decade, the split in demand for GaAs substrates between device companies an...
AbstractWith its increasing success in telecommunications and other markets, GaAs device makers are ...
AbstractThe second tier in the gallium arsenide electronics supply chain is that of merchant epitaxi...
AbstractAs we saw in Part 1 in the last issue, the challenges and opportunities presented by product...
AbstractSemi-insulating (SI) GaAs substrates could be said to be the raison d'etre for the GaAs elec...
AbstractThe second tier in the gallium arsenide electronics supply chain is that of merchant epitaxi...
AbstractThe progress of production epitaxy is relentless, and the market success of this tier of the...
A duet of papers given at Compound Semiconductor Mantech in New Orleans starts with RF Micro Devices...
Analysis of current GaAs and related device market initiated in a number of earlier works has been c...
AbstractWith its increasing success in telecommunications and other markets, GaAs device makers are ...
Analysis of current GaAs and related device market initiated in a number of earlier works has been c...
Over the next five years, analog GaAs semiconductor suppliers participating in emerging wireless app...
The 2004 GaAs device market grew by 12 percent over 2003, boosted by the cellular handset market, wh...
AbstractThe progress of production epitaxy is relentless, and the market success of this tier of the...
GaAs MESFETs have traditionally been the preferred technology for most RFIC applications. The past f...
AbstractIn the next half decade, the split in demand for GaAs substrates between device companies an...
AbstractWith its increasing success in telecommunications and other markets, GaAs device makers are ...
AbstractThe second tier in the gallium arsenide electronics supply chain is that of merchant epitaxi...
AbstractAs we saw in Part 1 in the last issue, the challenges and opportunities presented by product...
AbstractSemi-insulating (SI) GaAs substrates could be said to be the raison d'etre for the GaAs elec...
AbstractThe second tier in the gallium arsenide electronics supply chain is that of merchant epitaxi...
AbstractThe progress of production epitaxy is relentless, and the market success of this tier of the...
A duet of papers given at Compound Semiconductor Mantech in New Orleans starts with RF Micro Devices...
Analysis of current GaAs and related device market initiated in a number of earlier works has been c...
AbstractWith its increasing success in telecommunications and other markets, GaAs device makers are ...
Analysis of current GaAs and related device market initiated in a number of earlier works has been c...
Over the next five years, analog GaAs semiconductor suppliers participating in emerging wireless app...
The 2004 GaAs device market grew by 12 percent over 2003, boosted by the cellular handset market, wh...
AbstractThe progress of production epitaxy is relentless, and the market success of this tier of the...
GaAs MESFETs have traditionally been the preferred technology for most RFIC applications. The past f...
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