Add to ORKGProton irradiation effects in MOS and junction field-effect transistors and integrated circuit
Abstract-We studied the response of a commercial 0.13-ptm CMOS technology to high-energy (24-GeV) pr...
587-590MOSFET is a basic component of VLSI and ULSI circuits and finds applications in many electron...
In this paper experimental results on radiation effects on a BICMOS high speed commercial technology...
High energy electron irradiation effects on field effect transistors in integrated circuit device
We investigated the effect of irradiation on molybdenum disulfide (MoS<sub>2</sub>) field effect tra...
A literature review of the near-Earth trapped radiation of the Van Allen Belts, the radiation within...
The study of ionizing radiation effects on semiconductor devices is of great relevance for the globa...
The study of ionizing radiation effects on semiconductor devices is of great relevance for the globa...
The study of ionizing radiation effects on semiconductor devices is of great relevance for the globa...
Space radiation equivalences for permanent damage to silicon transistors by measuring changes in tra...
In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circ...
We studied the response of a commercial 0.13-μm CMOS technology to high-energy (24-GeV) proton irrad...
N-channel depletion MOSFETs were irradiated with 4MeV Proton and Co-60 gamma radiation in the dose r...
Complementary and p-channel MOS integrated circuits made by four commercial manufacturers were inves...
The effects of 22-MeV protons on various types of silicon single junction and silicon controlled rec...
Abstract-We studied the response of a commercial 0.13-ptm CMOS technology to high-energy (24-GeV) pr...
587-590MOSFET is a basic component of VLSI and ULSI circuits and finds applications in many electron...
In this paper experimental results on radiation effects on a BICMOS high speed commercial technology...
High energy electron irradiation effects on field effect transistors in integrated circuit device
We investigated the effect of irradiation on molybdenum disulfide (MoS<sub>2</sub>) field effect tra...
A literature review of the near-Earth trapped radiation of the Van Allen Belts, the radiation within...
The study of ionizing radiation effects on semiconductor devices is of great relevance for the globa...
The study of ionizing radiation effects on semiconductor devices is of great relevance for the globa...
The study of ionizing radiation effects on semiconductor devices is of great relevance for the globa...
Space radiation equivalences for permanent damage to silicon transistors by measuring changes in tra...
In this work we have studied the radiation effects on MOSFET electronic devices. The integrated circ...
We studied the response of a commercial 0.13-μm CMOS technology to high-energy (24-GeV) proton irrad...
N-channel depletion MOSFETs were irradiated with 4MeV Proton and Co-60 gamma radiation in the dose r...
Complementary and p-channel MOS integrated circuits made by four commercial manufacturers were inves...
The effects of 22-MeV protons on various types of silicon single junction and silicon controlled rec...
Abstract-We studied the response of a commercial 0.13-ptm CMOS technology to high-energy (24-GeV) pr...
587-590MOSFET is a basic component of VLSI and ULSI circuits and finds applications in many electron...
In this paper experimental results on radiation effects on a BICMOS high speed commercial technology...