A comparison of 4MeV Proton and Co-60 gamma irradiation induced degradation in the electrical characteristics of N-channel MOSFETs

N-channel depletion MOSFETs were irradiated with 4MeV Proton and Co-60 gamma radiation in the dose range of 100krad(Si) to 100Mrad(Si). The electrical characteristics of MOSFET such as threshold voltage (Vth), density of interface trapped charges (ΔNit), density of oxide trapped charges (ΔNot), transconductance (gm), mobility (μ), leakage current (IL) and drain saturation current (ID Sat) were studied as a function of dose. A considerable increase in ΔNit and ΔNot and decrease in Vth, gm, μ, and ID Sat was observed after irradiation. The results of 4MeV Proton irradiation were compared with that of Co-60 gamma radiation and it is found that the degradation is more for the devices irradiated with 4MeV Protons when compared with the Co-60 gamma radiation. This indicates that Protons induce more trapped charges in the field oxide region when compared to the gamma radiation