Add to ORKGThe development of a hardened silicon power transistor for operation in severe nuclear radiation env...
The aim of this work is the characterization of D-MOS (HEXFET) structure before and after irradiatio...
Design of transistor circuits, particularly those operating in the nanosecond time range necessitate...
Neutron, electron, proton, and electromagnetic radiation effects on transistors - handboo
This paper presents the DC behavior of transistors with finger layout and with gate enclosed layout ...
Ionizing radiation effects on transistor surfaces in vacuum or ambient nitrogen environmen
Electron radiation effects on terminal characteristics of unijunction transistor
The D60T, D62T, and D75T transistors in the nuclear reactor were irradiated with bias voltage and hi...
The effects of radiation on Nano-Scale Transistors is a primary concern for space level applications...
Space radiation equivalences for permanent damage to silicon transistors by measuring changes in tra...
A model connecting the radiation-induced noise figure shifts to the d.c. base current increases is p...
Causes of instability, high threshold voltage, and gamma radiation sensitivity of metal-oxide silico...
Ionizing radiation effects on transistor surfaces - facilities, fixtures, and instrumentation checke...
AbstractThis article tries to explain a modified method on dosimetry, based on electronic solid stat...
The reduction of electronics devices dimensions, produces a strong modification of their electrical ...
The development of a hardened silicon power transistor for operation in severe nuclear radiation env...
The aim of this work is the characterization of D-MOS (HEXFET) structure before and after irradiatio...
Design of transistor circuits, particularly those operating in the nanosecond time range necessitate...
Neutron, electron, proton, and electromagnetic radiation effects on transistors - handboo
This paper presents the DC behavior of transistors with finger layout and with gate enclosed layout ...
Ionizing radiation effects on transistor surfaces in vacuum or ambient nitrogen environmen
Electron radiation effects on terminal characteristics of unijunction transistor
The D60T, D62T, and D75T transistors in the nuclear reactor were irradiated with bias voltage and hi...
The effects of radiation on Nano-Scale Transistors is a primary concern for space level applications...
Space radiation equivalences for permanent damage to silicon transistors by measuring changes in tra...
A model connecting the radiation-induced noise figure shifts to the d.c. base current increases is p...
Causes of instability, high threshold voltage, and gamma radiation sensitivity of metal-oxide silico...
Ionizing radiation effects on transistor surfaces - facilities, fixtures, and instrumentation checke...
AbstractThis article tries to explain a modified method on dosimetry, based on electronic solid stat...
The reduction of electronics devices dimensions, produces a strong modification of their electrical ...
The development of a hardened silicon power transistor for operation in severe nuclear radiation env...
The aim of this work is the characterization of D-MOS (HEXFET) structure before and after irradiatio...
Design of transistor circuits, particularly those operating in the nanosecond time range necessitate...