Add to ORKGInternational audienceWe establish uniform L ∞ bounds for approximate solutions of the drift-diffusion system for electrons and holes in semiconductor devices, computed with the Schar-fetter-Gummel finite-volume scheme. The proof is based on a Moser iteration technique adapted to the discrete case
We analyze and benchmark the error and the convergence order of finite difference, finite-element as...
AbstractWe discuss strong solutions of a nonlinear parabolic system that arise from the simulation f...
AbstractThe first half of this paper is concerning with the nonlinear drift-diffusion semiconductor ...
International audienceWe establish uniform L ∞ bounds for approximate solutions of the drift-diffusi...
International audienceIn this paper, we study the large–time behavior of a numerical scheme discreti...
Electrical potentials and free boundary separating the depletion and ...
International audienceWe consider a unipolar degenerate drift-diffusion system where the relation be...
summary:In part I of the paper (see Zlámal [13]) finite element solutions of the nonstationary semi...
AbstractIn this paper, the authors consider the limiting problem of the drift-diffusion-Poisson mode...
International audienceWe propose a finite volume scheme for convection-diffusion equations with nonl...
AbstractThis work deals with non-isentropic hydrodynamic models for semiconductors with short moment...
We regard drift-diffusion equations for semiconductor devices in Lebesgue spaces. To that end we re...
International audienceIn this work, we apply an iterative energy method à la de Giorgi in order to e...
AbstractIn this paper the limit of vanishing Debye length in a bipolar drift-diffusion model for sem...
International audienceIn this paper, we propose a finite volume discretization for multidimensional ...
We analyze and benchmark the error and the convergence order of finite difference, finite-element as...
AbstractWe discuss strong solutions of a nonlinear parabolic system that arise from the simulation f...
AbstractThe first half of this paper is concerning with the nonlinear drift-diffusion semiconductor ...
International audienceWe establish uniform L ∞ bounds for approximate solutions of the drift-diffusi...
International audienceIn this paper, we study the large–time behavior of a numerical scheme discreti...
Electrical potentials and free boundary separating the depletion and ...
International audienceWe consider a unipolar degenerate drift-diffusion system where the relation be...
summary:In part I of the paper (see Zlámal [13]) finite element solutions of the nonstationary semi...
AbstractIn this paper, the authors consider the limiting problem of the drift-diffusion-Poisson mode...
International audienceWe propose a finite volume scheme for convection-diffusion equations with nonl...
AbstractThis work deals with non-isentropic hydrodynamic models for semiconductors with short moment...
We regard drift-diffusion equations for semiconductor devices in Lebesgue spaces. To that end we re...
International audienceIn this work, we apply an iterative energy method à la de Giorgi in order to e...
AbstractIn this paper the limit of vanishing Debye length in a bipolar drift-diffusion model for sem...
International audienceIn this paper, we propose a finite volume discretization for multidimensional ...
We analyze and benchmark the error and the convergence order of finite difference, finite-element as...
AbstractWe discuss strong solutions of a nonlinear parabolic system that arise from the simulation f...
AbstractThe first half of this paper is concerning with the nonlinear drift-diffusion semiconductor ...