Add to ORKGInternational audienceWe establish uniform L ∞ bounds for approximate solutions of the drift-diffusion system for electrons and holes in semiconductor devices, computed with the Schar-fetter-Gummel finite-volume scheme. The proof is based on a Moser iteration technique adapted to the discrete case
If in the classic van Roosbroeck system (Bell Syst Tech J 29:560–607, 1950) the statistic function i...
Abstract. We introduce a finite volume scheme for multi-dimensional drift-diffusion equations. Such ...
International audienceThe aim of this work is to study the large-time behavior of the Scharfetter– G...
International audienceWe establish uniform L ∞ bounds for approximate solutions of the drift-diffusi...
We regard drift-diffusion equations for semiconductor devices in Lebesgue spaces. To that end we ref...
International audienceIn this paper, we consider a numerical approximation of the Van Roosbroeck's d...
In this paper, optimal error estimates are obtained for a method for numerically solving the so-call...
Two-sided estimates are derived for the approximation of solutions to the drift-diusion steady-state...
We regard drift-diffusion equations for semiconductor devices in Lebesgue spaces. To that end we re...
If in the classic van Roosbroeck system (Bell Syst Tech J 29:560-607, 1950) the statistic function i...
We analyze and benchmark the error and the convergence order of finite difference, finite-element as...
International audienceIn this paper, we study the large–time behavior of a numerical scheme discreti...
The Drift Diffusion equations constitute the simplest and most commonly used model for simulating se...
The design of modern semiconductor devices requires the numerical simulation of basic fabrication st...
This paper deals with the analysis of an instationary drift-diffusion model for organic semiconducto...
If in the classic van Roosbroeck system (Bell Syst Tech J 29:560–607, 1950) the statistic function i...
Abstract. We introduce a finite volume scheme for multi-dimensional drift-diffusion equations. Such ...
International audienceThe aim of this work is to study the large-time behavior of the Scharfetter– G...
International audienceWe establish uniform L ∞ bounds for approximate solutions of the drift-diffusi...
We regard drift-diffusion equations for semiconductor devices in Lebesgue spaces. To that end we ref...
International audienceIn this paper, we consider a numerical approximation of the Van Roosbroeck's d...
In this paper, optimal error estimates are obtained for a method for numerically solving the so-call...
Two-sided estimates are derived for the approximation of solutions to the drift-diusion steady-state...
We regard drift-diffusion equations for semiconductor devices in Lebesgue spaces. To that end we re...
If in the classic van Roosbroeck system (Bell Syst Tech J 29:560-607, 1950) the statistic function i...
We analyze and benchmark the error and the convergence order of finite difference, finite-element as...
International audienceIn this paper, we study the large–time behavior of a numerical scheme discreti...
The Drift Diffusion equations constitute the simplest and most commonly used model for simulating se...
The design of modern semiconductor devices requires the numerical simulation of basic fabrication st...
This paper deals with the analysis of an instationary drift-diffusion model for organic semiconducto...
If in the classic van Roosbroeck system (Bell Syst Tech J 29:560–607, 1950) the statistic function i...
Abstract. We introduce a finite volume scheme for multi-dimensional drift-diffusion equations. Such ...
International audienceThe aim of this work is to study the large-time behavior of the Scharfetter– G...