Add to ORKGTo improve performance, reduce the size and cost of power electronic systems and allow more flexibility in designing power-electronic applications, the development trend in highpower semiconductors is toward higher current and voltage ratings. The integrated gatecommutated thyristor (IGCT) is the unit with the highest power ratings, but due to its large geometry, is the most challenging to switch. ABB’s new High-Power Technology (HPT) has paved the way to ratings of IGCTs that were impossible to reach before
Evolution of thyristor technology and the design concepts, which brought and maintain the phase cont...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...
The development of the power switching device IGCT in the Co. Polovodiče, Inc., principle of operati...
To improve performance, reduce the size and cost of power electronic systems and allow more flexibil...
Keywords «IGCT», «Power semiconductor device», «High power discrete device», «Bipolar device», «Indu...
In order to help improve performance, size and cost of high power electronic systems, the developmen...
International audienceThe generalized expansion of HVDC systems for applications such as interconnec...
In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard g...
Following in the steps of thyristor and GTO, GCT-technology merges their attractive features with th...
The paper introduces a sunrise power semiconductor switching device called IGCT. Converters based on...
This paper presents three concepts for Safe Operating Area (SOA) improvements for large area IGCTs (...
Abstract. Until recently, the Gate Commutated Thyristor (GCT) was regarded as the ideal device for v...
The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT)...
15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, ma...
Power converters are the little-known systems that make electricity so magical. They are what allow ...
Evolution of thyristor technology and the design concepts, which brought and maintain the phase cont...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...
The development of the power switching device IGCT in the Co. Polovodiče, Inc., principle of operati...
To improve performance, reduce the size and cost of power electronic systems and allow more flexibil...
Keywords «IGCT», «Power semiconductor device», «High power discrete device», «Bipolar device», «Indu...
In order to help improve performance, size and cost of high power electronic systems, the developmen...
International audienceThe generalized expansion of HVDC systems for applications such as interconnec...
In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard g...
Following in the steps of thyristor and GTO, GCT-technology merges their attractive features with th...
The paper introduces a sunrise power semiconductor switching device called IGCT. Converters based on...
This paper presents three concepts for Safe Operating Area (SOA) improvements for large area IGCTs (...
Abstract. Until recently, the Gate Commutated Thyristor (GCT) was regarded as the ideal device for v...
The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT)...
15 years ago the vertical SuperJunction (SJ) concept conceived for SJ power MOSFETs was the last, ma...
Power converters are the little-known systems that make electricity so magical. They are what allow ...
Evolution of thyristor technology and the design concepts, which brought and maintain the phase cont...
The Insulated Gate Bipolar Transistor (IGBT) is a minority-carrier device with high input impedance ...
The development of the power switching device IGCT in the Co. Polovodiče, Inc., principle of operati...