In order to help improve performance, size and cost of high power electronic systems, the development trend of power semiconductor devices continues towards achieving even higher blocking capabilities. This trend is fuelled by a number of applications in the fields of traction systems, industrial applications and HVDC converters. Also, new emerging high voltage markets such as pulse power applications are looking more likely to exploit the benefits of the newly developed high voltage devices. In this paper, we continue to follow the development trend by demonstrating a new range of IGBT, IGCT and their associated freewheeling diodes with blocking capabilities exceeding 8000V
Abstract: Following fast on the successful market introduction of the 1200V Soft-Punch-Through (SPT)...
Trends in the design and technology of power semiconductor devices are discussed on the threshold of...
The in-depth analysis of the Semiconductor Power Electronics applications are essential for future d...
To improve performance, reduce the size and cost of power electronic systems and allow more flexibil...
International audienceThe generalized expansion of HVDC systems for applications such as interconnec...
Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and dis...
The paper introduces a sunrise power semiconductor switching device called IGCT. Converters based on...
Abstract:- Power semiconductor devices are the key electronic components used in power electronic sy...
Power semiconductor devices are key components in all power electronic systems, particularly in hybr...
This paper presents a new series of 1700V IGBT modules using the new trench gate IGBT technology cal...
The development of solid-state switches for pulsed power applications has been of considerable inter...
MOS gated power devices are now available for power switching applications with voltage blocking req...
Power semiconductor devices are key components in all power electronic systems, particularly in hybr...
Keywords «IGCT», «Power semiconductor device», «High power discrete device», «Bipolar device», «Indu...
Abstract:The development of high voltage, high current density and high temperature power devices ar...
Abstract: Following fast on the successful market introduction of the 1200V Soft-Punch-Through (SPT)...
Trends in the design and technology of power semiconductor devices are discussed on the threshold of...
The in-depth analysis of the Semiconductor Power Electronics applications are essential for future d...
To improve performance, reduce the size and cost of power electronic systems and allow more flexibil...
International audienceThe generalized expansion of HVDC systems for applications such as interconnec...
Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and dis...
The paper introduces a sunrise power semiconductor switching device called IGCT. Converters based on...
Abstract:- Power semiconductor devices are the key electronic components used in power electronic sy...
Power semiconductor devices are key components in all power electronic systems, particularly in hybr...
This paper presents a new series of 1700V IGBT modules using the new trench gate IGBT technology cal...
The development of solid-state switches for pulsed power applications has been of considerable inter...
MOS gated power devices are now available for power switching applications with voltage blocking req...
Power semiconductor devices are key components in all power electronic systems, particularly in hybr...
Keywords «IGCT», «Power semiconductor device», «High power discrete device», «Bipolar device», «Indu...
Abstract:The development of high voltage, high current density and high temperature power devices ar...
Abstract: Following fast on the successful market introduction of the 1200V Soft-Punch-Through (SPT)...
Trends in the design and technology of power semiconductor devices are discussed on the threshold of...
The in-depth analysis of the Semiconductor Power Electronics applications are essential for future d...