Ge/SiGe multiple quantum wells(MQWs) are grown on silicon substrates using ultra-high vacuum chemical vapor deposition(UHVCVD) technique. The quantum-confined Stark effect(QCSE) is clearly observed in our MQWs structure.?2011 IEEE
Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown ...
Si/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and...
We describe a combined 6×6 k.p and one-band effective mass modelling tool to calculate absorption sp...
We design and simulate a Ge/SiGe multiple quantum wells (MQWs) modulator based on quantum confined S...
We report on the performance of the quantum confined Stark effect (QCSE) in ultra-thin (similar to 3...
Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at th...
Abstract: We demonstrate the first electroabsorption modulator using the quantum-confined Stark eff...
Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulators covering 1460 to...
We report modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well hetero...
Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulation covering 1460 t...
Abstract: Photocurrent measurements in Ge quantum wells and quantum tunneling resonance simulations ...
Electro-absorption and electro-refraction in Ge/SiGe coupled quantum wells (CQW) grown on Si have be...
We report modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well hetero...
Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at th...
Electro-refraction in standard (sQW) and coupled (cQW) Ge/SiGe quantum wells grown on Si have been i...
Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown ...
Si/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and...
We describe a combined 6×6 k.p and one-band effective mass modelling tool to calculate absorption sp...
We design and simulate a Ge/SiGe multiple quantum wells (MQWs) modulator based on quantum confined S...
We report on the performance of the quantum confined Stark effect (QCSE) in ultra-thin (similar to 3...
Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at th...
Abstract: We demonstrate the first electroabsorption modulator using the quantum-confined Stark eff...
Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulators covering 1460 to...
We report modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well hetero...
Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulation covering 1460 t...
Abstract: Photocurrent measurements in Ge quantum wells and quantum tunneling resonance simulations ...
Electro-absorption and electro-refraction in Ge/SiGe coupled quantum wells (CQW) grown on Si have be...
We report modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well hetero...
Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at th...
Electro-refraction in standard (sQW) and coupled (cQW) Ge/SiGe quantum wells grown on Si have been i...
Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown ...
Si/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and...
We describe a combined 6×6 k.p and one-band effective mass modelling tool to calculate absorption sp...
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