Type-II SiGe/Si MQWs (Multi-Quantum Wells) and Self-Organized Ge/Si Islands were successfully grown by a homemade ultra-high vacuum/chemical vapor deposition (UHV/CVD) system. Growth characteristics and PL (photoluminescence) spectra at different temperature were measured. It demonstrated that some accumulation of carriers in the islands results in the increase of the integrated PL intensity of island-related at a certain temperature range
Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by mol...
We report a room temperature study of the direct band gap photoluminescence of tensile-strained Ge/S...
Employing a low-temperature growth mode, we fabricated ultrathin Si1-xGex/Si multiple quantum well s...
Ge/SiGe multiple quantum wells(MQWs) are grown on silicon substrates using ultra-high vacuum chemica...
The use of Si based materials for optoelectronic applications is hampered by the indirect nature of ...
Si/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and...
This thesis is based on the results concerning the epitaxial growth and characterization of silicon ...
SiGe quantum wells were grown at 525\u2009\ub0C using a commercially available, ultrahigh vacuum\u20...
The relationship between Ge content of Si1-xGex layers and growth conditions was investigated via UH...
The distribution of Ge islands is analysed in order to understand their optical behaviour. The Ce is...
Strain-symmetrized Ge/SiGe multiple quantum wells have been grown on a thin (2.1 µm) relaxed Si0.2Ge...
This work introduces a new approach to achieve a unimodal dome-shaped island population for the self...
The structural and optical properties of self-assembled Ge dots grown on Si(110) substrates by low p...
Employing a low-temperature growth-mode, we fabricated ultrathin Si1-xGex/Si multiple quantum well (...
There is an increasing interest in Si-based optoelectronics using Si1-xGex nanostructures due to the...
Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by mol...
We report a room temperature study of the direct band gap photoluminescence of tensile-strained Ge/S...
Employing a low-temperature growth mode, we fabricated ultrathin Si1-xGex/Si multiple quantum well s...
Ge/SiGe multiple quantum wells(MQWs) are grown on silicon substrates using ultra-high vacuum chemica...
The use of Si based materials for optoelectronic applications is hampered by the indirect nature of ...
Si/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and...
This thesis is based on the results concerning the epitaxial growth and characterization of silicon ...
SiGe quantum wells were grown at 525\u2009\ub0C using a commercially available, ultrahigh vacuum\u20...
The relationship between Ge content of Si1-xGex layers and growth conditions was investigated via UH...
The distribution of Ge islands is analysed in order to understand their optical behaviour. The Ce is...
Strain-symmetrized Ge/SiGe multiple quantum wells have been grown on a thin (2.1 µm) relaxed Si0.2Ge...
This work introduces a new approach to achieve a unimodal dome-shaped island population for the self...
The structural and optical properties of self-assembled Ge dots grown on Si(110) substrates by low p...
Employing a low-temperature growth-mode, we fabricated ultrathin Si1-xGex/Si multiple quantum well (...
There is an increasing interest in Si-based optoelectronics using Si1-xGex nanostructures due to the...
Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by mol...
We report a room temperature study of the direct band gap photoluminescence of tensile-strained Ge/S...
Employing a low-temperature growth mode, we fabricated ultrathin Si1-xGex/Si multiple quantum well s...