Electro-luminescence and photo-luminescence from strained SiGe/Si quantum well

Dong WF
Yang QQ
Li J
Wang QM
Chui QA
Zhou JM
Huang Q
Dong WF ACAD SINICAINST SEMICONDNATL INTEGRATED OPTOELECT LABPOB 912BEIJING 100083PEOPLES R CHINA.

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Publication date

January 1996

DOI

10.1088/1004-423x/5/6/007

ISSN

1004-423X

Abstract

Photo-luminescence and electro-luminescence from step-graded index SiGe/Si quantum well grown by molecular beam epitaxy is reported. The SiGe/Si step-graded index quantum well structure is beneficial to the enhancing of electro-luminescence. The optical and electrical properties of this structure are discussed

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Electro-luminescence and photo-luminescence from strained SiGe/Si quantum well

Abstract

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Electro-luminescence and photo-luminescence from strained SiGe/Si quantum well

Abstract

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