Add to ORKGDespite tremendous progress and learning with EUV lithography, quantitative experimental information about the severity of point-like phase defects remains in short supply. We present a study of measured, EUV aerial images from a series of well-characterized, open-field, bump-type programmed phase defects, created on a substrate before multilayer deposition
This dissertation focuses on issues related to extreme ultraviolet (EUV) lithography masktechnology:...
There's a big push for development and commercialization of extreme ultraviolet (EUV) lithography fo...
The production of defect-free mask blanks remains a key challenge for EUV lithography. Mask-blank in...
The authors describe the implementation of a phase-retrieval algorithm to reconstruct phase and comp...
Mask defects inspection and imaging is one of the most important issues for any pattern transfer lit...
We describe the imaging and characterization of native defects on a full field extreme ultraviolet (...
One of the most challenging requirements for the next generation EUV lithography is an extremely low...
The ability to fabricate defect-free mask blanks is a well-recognized challenge in enabling extreme ...
An approximate method is proposed to calculate the EUV scattering from a defect within a multilayer ...
This article is about the Actinic Inspection of Extreme Ultraviolet (EUV) lithography Programmed Mul...
A method for actinic inspection of EUV mask blanks is described, in which EUV photoresist is applied...
The authors report on experimental and simulative scattering analyses of phase and amplitude defects...
Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting m...
The production of defect-free mask blanks remains a key challenge for extreme ultraviolet (EUV) lith...
Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting m...
This dissertation focuses on issues related to extreme ultraviolet (EUV) lithography masktechnology:...
There's a big push for development and commercialization of extreme ultraviolet (EUV) lithography fo...
The production of defect-free mask blanks remains a key challenge for EUV lithography. Mask-blank in...
The authors describe the implementation of a phase-retrieval algorithm to reconstruct phase and comp...
Mask defects inspection and imaging is one of the most important issues for any pattern transfer lit...
We describe the imaging and characterization of native defects on a full field extreme ultraviolet (...
One of the most challenging requirements for the next generation EUV lithography is an extremely low...
The ability to fabricate defect-free mask blanks is a well-recognized challenge in enabling extreme ...
An approximate method is proposed to calculate the EUV scattering from a defect within a multilayer ...
This article is about the Actinic Inspection of Extreme Ultraviolet (EUV) lithography Programmed Mul...
A method for actinic inspection of EUV mask blanks is described, in which EUV photoresist is applied...
The authors report on experimental and simulative scattering analyses of phase and amplitude defects...
Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting m...
The production of defect-free mask blanks remains a key challenge for extreme ultraviolet (EUV) lith...
Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting m...
This dissertation focuses on issues related to extreme ultraviolet (EUV) lithography masktechnology:...
There's a big push for development and commercialization of extreme ultraviolet (EUV) lithography fo...
The production of defect-free mask blanks remains a key challenge for EUV lithography. Mask-blank in...